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SMMBD914LT1G PDF预览

SMMBD914LT1G

更新时间: 2024-02-03 15:23:52
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关光电二极管PC
页数 文件大小 规格书
4页 132K
描述
High-Speed Switching Diode

SMMBD914LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:1.02
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:227114Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-09-11 07:47:11
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.5 A
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.225 W
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMMBD914LT1G 数据手册

 浏览型号SMMBD914LT1G的Datasheet PDF文件第2页浏览型号SMMBD914LT1G的Datasheet PDF文件第3页浏览型号SMMBD914LT1G的Datasheet PDF文件第4页 
MMBD914LT1G,  
SMMBD914LT1G,  
MMBD914LT3G,  
SMMBD914LT3G  
High-Speed Switching  
Diode  
http://onsemi.com  
Features  
AECQ101 Qualified and PPAP Capable  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant*  
SOT23  
CASE 318  
STYLE 8  
3
1
MAXIMUM RATINGS  
CATHODE  
ANODE  
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
MARKING DIAGRAM  
Reverse Voltage  
Forward Current  
V
R
I
200  
mAdc  
mAdc  
F
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
500  
FM(surge)  
5D M G  
G
1
Symbol  
Max  
Unit  
Total Device Dissipation  
P
225  
mW  
D
5D = Device Code  
FR5 Board (Note 1)  
M
= Date Code*  
T = 25C  
A
G
= PbFree Package  
Derate above 25C  
1.8  
mW/C  
(Note: Microdot may be in either location)  
Thermal Resistance, JunctiontoAmbient  
R
556  
300  
C/W  
JA  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Total Device Dissipation  
P
D
mW  
Alumina Substrate (Note 2)  
T = 25C  
A
ORDERING INFORMATION  
Derate above 25C  
2.4  
mW/C  
Device  
Package  
Shipping  
Thermal Resistance, JunctiontoAmbient  
R
417  
C/W  
C  
JA  
MMBD914LT1G  
SOT23  
(PbFree)  
3,000 /  
Tape & Reel  
Junction and Storage Temperature  
Range  
T , T  
J
55 to +150  
stg  
SMMBD914LT1G  
MMBD914LT3G  
SMMBD914LT3G  
SOT23  
(PbFree)  
3,000 /  
Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
SOT23  
(PbFree)  
10,000 /  
Tape & Reel  
SOT23  
10,000 /  
(PbFree)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 7  
MMBD914LT1/D  

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