Datasheet > SMMBD701LT1

SMMBD701LT1

更新时间： 2024-01-10 00:07:56

品牌	Logo	应用领域
安森美 - ONSEMI		光电二极管
页数	文件大小	规格书
5页	132K
描述
SILICON, UHF BAND, MIXER DIODE, TO-236AB, PLASTIC, CASE 318-08, TO-236, 3 PIN

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SMMBD701LT1 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.60
Factory Lead Time：	1 week	风险等级：	5.75
Samacsys Description：	Silicon Hot-Carrier Diodes Schottky Barrier Diodes	二极管类型：	MIXER DIODE
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	125 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
子类别：	Other Diodes	表面贴装：	YES
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED

SMMBD701LT1 数据手册

MBD701,

MMBD701L,

SMMBD701L

Preferred Device

Silicon Hot-Carrier Diodes

Schottky Barrier Diodes

http://onsemi.com

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

TO−92 2−Lead

CASE 182

STYLE 1

SOT−23 (TO−236)

CASE 318

Features

 Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

STYLE 8

 Very Low Capacitance − 1.0 pF @ V = 20 V

TO−92

SOT−23

 High Reverse Voltage − to 70 V

 Low Reverse Leakage − 200 nA (Max)

 AEC Qualified and PPAP Capable

CATHODE

ANODE CATHODE

ANODE

 S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

MARKING DIAGRAMS

 Pb−Free Packages are Available*

MBD

701

AYWW G

5H M G

MAXIMUM RATINGS

Rating

Reverse Voltage

Symbol

Value

Unit

Forward Power Dissipation

TO−92

SOT−23

@ T = 25C

MBD701

280

200

= Assembly Location

= Year

MMBD701L, SMMBD701L

WW = Work Week

5H = Device Code (SOT−23)

Derate above 25C

MBD701

mW/C

2.8

2.0

= Date Code*

MMBD701L, SMMBD701L

= Pb−Free Package

Operating Junction Temperature

Range

−55 to +125

C

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may vary

dependingupon manufacturing location.

Storage Temperature Range

stg

−55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

downloadthe ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.



Semiconductor Components Industries, LLC, 2011

Publication Order Number:

November, 2011 − Rev. 6

MBD701/D

12 3 4 5

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与SMMBD701LT1相关器件

型号	品牌	描述	获取价格	数据表
SMMBD701LT1G	ONSEMI	Silicon Hot-Carrier Diodes	获取价格
SMMBD770T1G	ONSEMI	MMBD330T1G	获取价格
SMMBD914LT1	ONSEMI	暂无描述	获取价格
SMMBD914LT1G	ONSEMI	High-Speed Switching Diode	获取价格
SMMBD914LT3G	ONSEMI	High-Speed Switching Diode	获取价格
SMMBF0202PLT1	ONSEMI	TRANSISTOR 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN,	获取价格

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