MBD701,
MMBD701L,
SMMBD701L
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
www.onsemi.com
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
TO−92 2−Lead
CASE 182
STYLE 1
SOT−23 (TO−236)
CASE 318
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
STYLE 8
• Very Low Capacitance − 1.0 pF @ V = 20 V
R
TO−92
SOT−23
• High Reverse Voltage − to 70 V
2
1
3
1
• Low Reverse Leakage − 200 nA (Max)
CATHODE
ANODE CATHODE
ANODE
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC Qualified and PPAP
Capable
MARKING DIAGRAMS
• These Devices are Pb−Free and are RoHS Compliant
MBD
701
AYW G
G
MAXIMUM RATINGS
5H M G
G
Rating
Reverse Voltage
Symbol
Value
Unit
1
V
R
70
V
Forward Power Dissipation
P
F
TO−92
SOT−23
@ T = 25°C
mW
A
MBD701
280
200
A
Y
= Assembly Location
= Year
MMBD701L, SMMBD701L
W
= Work Week
Derate above 25°C
MBD701
MMBD701L, SMMBD701L
mW/°C
5H = Device Code (SOT−23)
M
2.8
2.0
= Date Code*
= Pb−Free Package
G
Operating Junction Temperature
Range
T
−55 to +125
°C
°C
J
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
dependingupon manufacturing location.
Storage Temperature Range
T
stg
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 7
MBD701/D