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SMK1260WF PDF预览

SMK1260WF

更新时间: 2024-11-26 09:18:59
品牌 Logo 应用领域
可天士 - KODENSHI 稳压器开关
页数 文件大小 规格书
8页 402K
描述
SWITCHING REGULATOR APPLICATIONS

SMK1260WF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.72雪崩能效等级(Eas):549 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.65 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):48 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SMK1260WF 数据手册

 浏览型号SMK1260WF的Datasheet PDF文件第2页浏览型号SMK1260WF的Datasheet PDF文件第3页浏览型号SMK1260WF的Datasheet PDF文件第4页浏览型号SMK1260WF的Datasheet PDF文件第5页浏览型号SMK1260WF的Datasheet PDF文件第6页浏览型号SMK1260WF的Datasheet PDF文件第7页 
SMK1260WF  
Advanced N-Ch Power MOSFET  
SWITCHING REGULATOR APPLICATIONS  
Features  
PIN Connection  
High Voltage : BVDSS=600V(Min.)  
Low Crss : Crss=14.6pF(Typ.)  
Low gate charge : Qg=41nC(Typ.)  
Low RDS(on) : RDS(on)=0.65(Max.)  
D
G
Ordering Information  
Type No.  
Marking  
SMK1260  
SMK1260  
Package Code  
TO-220F-3L  
G
D
S
SMK1260WF  
S
TO-220F-3L  
SMK1260WF (HF)  
TO-220F-3L  
* SMK1260WF : Pb Free Product  
* SMK1260WF (HF) : Halogen Free Product  
Marking Diagram  
Column 1 : Manufacturer  
Column 2 : Production Information  
e.g.) GFYMDD  
AUK  
GFYMDD  
-. G : Option Code (H : Halogen Free)  
-. F : Factory Management Code  
SMK1260  
-. YMDD : Date Code (Year, Month, Date)  
Column 3 : Device Code  
Absolute maximum ratings (TC=25C unless otherwise noted)  
Characteristic  
Symbol  
Rating  
600  
30  
12  
Unit  
V
Drain-source voltage  
VDSS  
Gate-source voltage  
VGSS  
V
TC=25C  
TC=100C  
IDM  
A
*
Drain current (DC)  
ID  
7.1  
48  
A
*
Drain current (Pulsed)  
Power dissipation  
A
PD  
IAS  
EAS  
IAR  
EAR  
TJ  
45  
W
A
Avalanche current (Single)  
Single pulsed avalanche energy  
Avalanche current (Repetitive)  
Repetitive avalanche energy  
Junction temperature  
12  
549  
12  
mJ  
A
11.6  
150  
mJ  
C  
Storage temperature range  
Tstg  
-55~150  
* Limited by maximum junction temperature  
Characteristic  
Symbol  
Rth(J-C)  
Rth(J-A)  
Typ.  
Max.  
Unit  
Junction-case  
-
-
2.7  
Thermal  
resistance  
C/W  
Junction-ambient  
62.5  
KSD-T0O088-001  
1

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