生命周期: | Lifetime Buy | 零件包装代码: | DIP |
包装说明: | 0.400 INCH, CERAMIC, DIP-20 | 针数: | 20 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.33 |
访问模式: | FAST PAGE | 最长访问时间: | 120 ns |
其他特性: | CAS BEFORE RAS REFRESH | I/O 类型: | COMMON |
JESD-30 代码: | R-CDIP-T20 | 长度: | 25.527 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | FAST PAGE DRAM |
内存宽度: | 4 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 20 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 1MX4 |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装等效代码: | DIP20,.4 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | 5 V | 认证状态: | Not Qualified |
刷新周期: | 1024 | 筛选级别: | MIL-STD-883 |
座面最大高度: | 4.445 mm | 自我刷新: | NO |
最大待机电流: | 0.004 A | 子类别: | DRAMs |
最大压摆率: | 0.07 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMJ44400-12HL | MICROSS |
获取价格 |
DRAM, |
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SMJ44400-12HR/M | MICROSS |
获取价格 |
Fast Page DRAM, 1MX4, 120ns, CMOS, CDFP20, CERAMIC, FP-20 |
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SMJ44400-12HRM | TI |
获取价格 |
1MX4 FAST PAGE DRAM, 120ns, CDFP20, CERAMIC, DFP-20 |
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SMJ44400-12JD/M | MICROSS |
获取价格 |
Fast Page DRAM, 1MX4, 120ns, CMOS, CDIP20, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-20 |
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SMJ44400-12JDB | MICROSS |
获取价格 |
DRAM, |
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SMJ44400-12JDM | TI |
获取价格 |
1MX4 FAST PAGE DRAM, 120ns, CDIP20, 0.400 INCH, SIDE BREAZED, CERAMIC, DIP-20 |
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SMJ44400-12SV | MICROSS |
获取价格 |
DRAM, |
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SMJ44400-12SVM | TI |
获取价格 |
1MX4 FAST PAGE DRAM, 120ns, CDIP20, CERAMIC, DIP-20 |
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SMJ44400-80/HRM | MICROSS |
获取价格 |
Fast Page DRAM, 1MX4, 80ns, CMOS, CDFP20, CERAMIC, DFP-20 |
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SMJ44400-80HL | MICROSS |
获取价格 |
DRAM |
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