生命周期: | Active | 包装说明: | DIP, |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.83 |
访问模式: | PAGE | 最长访问时间: | 120 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | JESD-30 代码: | R-CDIP-T16 |
JESD-609代码: | e0 | 内存密度: | 262144 bit |
内存集成电路类型: | PAGE MODE DRAM | 内存宽度: | 1 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 16 | 字数: | 262144 words |
字数代码: | 256000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 110 °C | 最低工作温度: | -55 °C |
组织: | 256KX1 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 座面最大高度: | 5.08 mm |
最大供电电压 (Vsup): | 5.25 V | 最小供电电压 (Vsup): | 4.75 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | NMOS | 温度等级: | OTHER |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 7.62 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMJ4256-15JDS | TI |
获取价格 |
256KX1 PAGE MODE DRAM, 150ns, CDIP16, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, D | |
SMJ4256-15JDS | ROCHESTER |
获取价格 |
Page Mode DRAM, 256KX1, 150ns, NMOS, CDIP16, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CER | |
SMJ4256-20FVS | TI |
获取价格 |
256KX1 PAGE MODE DRAM, 200ns, CQCC18, CERAMIC, LCC-18 | |
SMJ4256-20JDS | TI |
获取价格 |
256KX1 PAGE MODE DRAM, 200ns, CDIP16, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, D | |
SMJ4256-20JDS | ROCHESTER |
获取价格 |
Page Mode DRAM, 256KX1, 200ns, NMOS, CDIP16, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CER | |
SMJ4256FV | TI |
获取价格 |
262,144-BIT DYNAMIC RANDOM-ACCESS MEMORY | |
SMJ4256JD | TI |
获取价格 |
262,144-BIT DYNAMIC RANDOM-ACCESS MEMORY | |
SMJ44100-10HJM | TI |
获取价格 |
4MX1 FAST PAGE DRAM, 100ns, CDSO20, CERAMIC, SOJ-20 | |
SMJ44100-10HLM | TI |
获取价格 |
4MX1 FAST PAGE DRAM, 100ns, CDSO20, 0.350 X 0.675 INCH, CERAMIC, LCC-26/20 | |
SMJ44100-10HMM | TI |
获取价格 |
4MX1 FAST PAGE DRAM, 100ns, CDSO20, 0.400 INCH, CERAMIC, SOLCC-26/20 |