TVS Diode Datasheet
SMF3.3
Surface Mount – 200W
RoHS
Pb e3
Description
SMF3.3 is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other
transient voltage events.
Features and Benefits
■ 200W peak pulse power
capability at 10/1000µs
waveform, repetition rate
(duty cycle): 0.01%
■ EFT protection of data lines in
accordance with IEC 61000-
4-4
■ Fast response time: typically
less than 1.0ns from 0 Volts
to VBR min
■ 1200W peak pulse power
capability at 8/20us waveform
■ Excellent clamping capability
■ High temperature soldering:
260°C/30 seconds at
terminals
Uni-directional
■ Compatible with industrial
standard package SOD-123FL
■ Built-in strain relief
■ Low profile: maximum height
of 1.08mm.
Additional Information
■ Meet MSL level1, per J-STD-
020C, LF maximun peak of
260°C
■ For surface mounted
applications to optimize board
space
■ Matte tin lead–free plated
■ Typical failure mode is short
from over-specified voltage or
current
■ Halogen-free and RoHS-
compliant
Resources
Accessories
Samples
■ Pb-free E3 means 2nd level
interconnect is Pb-free and
the terminal finish material is
tin(Sn) (IPC/JEDEC J-STD-
609A.01)
■ Whisker test is conducted
based on JEDEC JESD201A
per its table 4a and 4c
Agency Approvals
Agency
Agency File Number
■ IEC 61000-4-2 ESD 30kV(Air),
30kV (Contact)
E230531
■ ESD protection of data lines
in accordance with IEC
61000-4-2
Maximum Ratings andThermal Characteristics
(TA=25 OC unless otherwise noted)
Applications
Parameter
Symbol
Value
Unit
SMF3.3 series is ideal for the protection of portable electronics/
hard drives, notebooks, VCC busses, POS terminal, SSDs, power
supplies, monitors, and vulnerable circuit used in other consumer
applications.
Peak Pulse Power
Dissipation at
8/20µs (Note 2)
1200
W
PPPM
10/1000µs (Note 3)
200
W
TA=25ºC (Note 1)
Thermal Resistance Junction- to- Ambient RθJA
220
100
°C/W
°C/W
Thermal Resistance Junction- to- Lead
OperatingTemperature Range
StorageTemperature Range
Notes:
RθJL
TJ
Functional Diagram
-55 to 150 °C
TSTG -55 to 150 °C
Cathode
Anode
1. Non-repetitive current pulse, per Fig. 4 and derated aboveTJ (initial) =25ºC per Fig. 3.
Uni-directional
Electrical Characteristics (TA=25°C unless otherwise noted)
Maximum
Peak Pulse
Current
(10/1000μS)
Ipp (A)
Maximum
Clamping
Voltage @Ipp
(10/1000μS)
VC (V)
Maximum
Peak Pulse
Current
(8/20μS)
Ipp (A)
Maximum
Clamping
Voltage @Ipp
(8/20μS)
Breakdown
VoltageVBR
(Volts) @ IT
Test
Current
IT
Reverse
Stand off
VoltageVR
(V)
Maximum
Reverse
Leakage @VR
IR (µA)
Part
Number
Marking
Code
(mA)
MIN
MAX
VC (V)
SMF3.3
33
3.4
4.3
10
3.3
0.5
30.0
6.8
120.0
10.0
Notes:
1. VBR measured after IT applied for 300µs, IT = sequare wave pulse or equivalent.
2. Surge current waveform per 10/1000µs exponential wave and derated per Fig.2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
4. Surge current waveform per 8/20µs exponential wave and derated per Fig.6.
© 2023 Littelfuse, Inc.
Specifications are subject to change without notice.
1
Revised: GD. 11/03/23