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SMF3.3 PDF预览

SMF3.3

更新时间: 2024-11-21 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE 电子脉冲
页数 文件大小 规格书
4页 737K
描述
SMF3.3专门用于保护敏感电子设备,使其免受雷击和其他瞬态电压事件引起的瞬态电压侵害。 功能与特色: 10×1000μs波形时的峰值脉冲功率为200W,重复频率(工作循环): 0.0

SMF3.3 数据手册

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TVS Diode Datasheet  
SMF3.3  
Surface Mount – 200W  
RoHS  
Pb e3  
Description  
SMF3.3 is designed specifically to protect sensitive electronic  
equipment from voltage transients induced by lightning and other  
transient voltage events.  
Features and Benefits  
200W peak pulse power  
capability at 10/1000µs  
waveform, repetition rate  
(duty cycle): 0.01%  
EFT protection of data lines in  
accordance with IEC 61000-  
4-4  
Fast response time: typically  
less than 1.0ns from 0 Volts  
to VBR min  
1200W peak pulse power  
capability at 8/20us waveform  
Excellent clamping capability  
High temperature soldering:  
260°C/30 seconds at  
terminals  
Uni-directional  
Compatible with industrial  
standard package SOD-123FL  
Built-in strain relief  
Low profile: maximum height  
of 1.08mm.  
Additional Information  
Meet MSL level1, per J-STD-  
020C, LF maximun peak of  
260°C  
For surface mounted  
applications to optimize board  
space  
Matte tin lead–free plated  
Typical failure mode is short  
from over-specified voltage or  
current  
Halogen-free and RoHS-  
compliant  
Resources  
Accessories  
Samples  
Pb-free E3 means 2nd level  
interconnect is Pb-free and  
the terminal finish material is  
tin(Sn) (IPC/JEDEC J-STD-  
609A.01)  
Whisker test is conducted  
based on JEDEC JESD201A  
per its table 4a and 4c  
Agency Approvals  
Agency  
Agency File Number  
IEC 61000-4-2 ESD 30kV(Air),  
30kV (Contact)  
E230531  
ESD protection of data lines  
in accordance with IEC  
61000-4-2  
Maximum Ratings andThermal Characteristics  
(TA=25 OC unless otherwise noted)  
Applications  
Parameter  
Symbol  
Value  
Unit  
SMF3.3 series is ideal for the protection of portable electronics/  
hard drives, notebooks, VCC busses, POS terminal, SSDs, power  
supplies, monitors, and vulnerable circuit used in other consumer  
applications.  
Peak Pulse Power  
Dissipation at  
8/20µs (Note 2)  
1200  
W
PPPM  
10/1000µs (Note 3)  
200  
W
TA=25ºC (Note 1)  
Thermal Resistance Junction- to- Ambient RθJA  
220  
100  
°C/W  
°C/W  
Thermal Resistance Junction- to- Lead  
OperatingTemperature Range  
StorageTemperature Range  
Notes:  
RθJL  
TJ  
Functional Diagram  
-55 to 150 °C  
TSTG -55 to 150 °C  
Cathode  
Anode  
1. Non-repetitive current pulse, per Fig. 4 and derated aboveTJ (initial) =25ºC per Fig. 3.  
Uni-directional  
Electrical Characteristics (TA=25°C unless otherwise noted)  
Maximum  
Peak Pulse  
Current  
(10/1000μS)  
Ipp (A)  
Maximum  
Clamping  
Voltage @Ipp  
(10/1000μS)  
VC (V)  
Maximum  
Peak Pulse  
Current  
(8/20μS)  
Ipp (A)  
Maximum  
Clamping  
Voltage @Ipp  
(8/20μS)  
Breakdown  
VoltageVBR  
(Volts) @ IT  
Test  
Current  
IT  
Reverse  
Stand off  
VoltageVR  
(V)  
Maximum  
Reverse  
Leakage @VR  
IR (µA)  
Part  
Number  
Marking  
Code  
(mA)  
MIN  
MAX  
VC (V)  
SMF3.3  
33  
3.4  
4.3  
10  
3.3  
0.5  
30.0  
6.8  
120.0  
10.0  
Notes:  
1. VBR measured after IT applied for 300µs, IT = sequare wave pulse or equivalent.  
2. Surge current waveform per 10/1000µs exponential wave and derated per Fig.2.  
3. All terms and symbols are consistent with ANSI/IEEE C62.35.  
4. Surge current waveform per 8/20µs exponential wave and derated per Fig.6.  
© 2023 Littelfuse, Inc.  
Specifications are subject to change without notice.  
1
Revised: GD. 11/03/23  

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