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SMF160A PDF预览

SMF160A

更新时间: 2024-02-02 23:37:29
品牌 Logo 应用领域
鲁光 - LGE IOT二极管
页数 文件大小 规格书
3页 2747K
描述
暂无描述

SMF160A 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOD-123FLReach Compliance Code:unknown
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1
类别:DiodesCondition:10×1000us
PPK (W):200VRWM (V) max.:160
VBR (V) min.:178VBR (V) max.:197
IR (uA) max.:1VC (V) max.:259
Condition1_IPP (A):0.7722007722007722C (pF) max.:-
AEC Qualified:-最高工作温度:150
最低工作温度:-55MSL等级:-
生命周期:Active是否无铅:Yes
符合Reach:Yes符合RoHS:Yes
ECCN代码:EAR99Package Outlines:SOD-123FL

SMF160A 数据手册

 浏览型号SMF160A的Datasheet PDF文件第2页浏览型号SMF160A的Datasheet PDF文件第3页 
SMF Series  
Transient Voltage Suppressors  
Working Voltage: 5.0 to 220 V  
SOD-123FL  
Peak Pulse Power: 200 W  
0.114 2.90  
Features  
0.102  
[
2.60]  
Glass passivated chip  
1.20  
0.70  
[
]
200 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle):0.01 %  
0.075 1.90  
0.063 1.60  
[
]
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
0.154 3.90  
0.138 3.50  
[
]
0.051 1.30  
0.037 0.95  
[
]
Mechanical Data  
Case: Molded plastic  
0.039 1.00  
0.023 0.60  
0.01 0.25  
0.002 0.05  
Epoxy: UL 94V-0 rate flame retardant  
[ ]  
[
]
Lead: Solderable per MIL-STD-750, method  
Dimensions : inch [ mm ]  
2026  
Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
200  
UNIT  
W
Parameter  
Symbol  
PPP  
Peak power dissipation with a 10/1000μs waveform(1)  
Peak power dissipation with a 8/20μs waveform(1)  
PPP  
IPP  
PD  
1000  
W
A
Peak pulse current wih a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
See Next Table  
0.4  
W
IFSM  
20  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 25 A for  
unidirectional only  
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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