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SMF105A PDF预览

SMF105A

更新时间: 2024-09-25 12:56:59
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 339K
描述
1A patch fast recovery diode 600V SMA series

SMF105A 数据手册

 浏览型号SMF105A的Datasheet PDF文件第2页 
SMF101A - SMF107A  
SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 1.0 A  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop, High Efficiency  
Low Power Loss  
Fast Recovery Time  
Plastic Case Material has UL Flammability  
B
SMA(DO-214AC)  
Mechanical Data  
Dim  
MinMax  
A
B
C
D
E
G
H
J
2.29  
4.00  
1.27  
0.15  
4.80  
0.10  
0.76  
2.01  
2.92  
4.60  
1.63  
0.31  
5.59  
0.20  
1.52  
2.62  
!
!
Case: SMA/DO-214AC, Molded Plastic  
A
J
C
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
!
!
D
Weight: 0.064 grams (approx.)  
!
G
H
E
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics  
TA = 25C unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Symbol  
Characteristic  
SMF101A SMF102A SMF103A SMF104A SMF105A SMF106A SMF107A Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
1000  
700  
V
V
V
Maximum RMS voltage  
560  
800  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TA=65 C (NOTE 1)  
1000  
100  
I(AV)  
1.0  
A
A
V
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
IFSM  
30.0  
1.3  
rated load (JEDEC Method)  
TL=25 C  
VF  
IR  
Maximum instantaneous forward voltage at 1.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
100.0  
µ
A
TA=100 C  
250  
500  
150  
trr  
ns  
Maximum reverse recovery time (NOTE 2)  
Typical junction capacitance (NOTE 3)  
Typical thermal resistance (NOTE 4)  
CJ  
pF  
15  
K/W  
180  
RθJA  
Operating junction and storage temperature range  
TJ,TSTG  
-50 to +150  
C
Note:  
1.Averaged over any 20ms period.  
2.Measured with IF=0.5A, IR=1A, Irr=0.25A.  
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
4.Thermal resistance junction to ambient, 6.0 mm2 coppeer pads to each terminal.  
1 of 2  
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