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SMDJ75 PDF预览

SMDJ75

更新时间: 2024-02-20 18:57:41
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
4页 2472K
描述
暂无描述

SMDJ75 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-J2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.33Is Samacsys:N
其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED最大击穿电压:92.1 V
最小击穿电压:83.3 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-J2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:3000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:6.5 W最大重复峰值反向电压:75 V
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:J BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SMDJ75 数据手册

 浏览型号SMDJ75的Datasheet PDF文件第2页浏览型号SMDJ75的Datasheet PDF文件第3页浏览型号SMDJ75的Datasheet PDF文件第4页 
SMDJ Series  
Surface Mount  
Transient Voltage Suppressors  
Working Voltage: 5.0 to 440 V  
Peak Pulse Power: 3000 W  
SMC/ DO-214AB  
Features  
Glass passivated chip  
3000 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle):0.01 %  
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
Mechanical Data  
Case: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Solderable per MIL-STD-750, method  
2026  
Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
3000  
UNIT  
W
Parameter  
Symbol  
PPP  
Peak power dissipation with a 10/1000μs waveform(1)  
Peak pulse current wih a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
See Next Table  
6.5  
A
W
IFSM  
300  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 100A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170301-P1  

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