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SMDJ7.5C PDF预览

SMDJ7.5C

更新时间: 2024-11-14 22:58:47
品牌 Logo 应用领域
力特 - LITTELFUSE 电视
页数 文件大小 规格书
6页 1002K
描述
TVS DIODE 7.5V 13.55V DO214AB

SMDJ7.5C 数据手册

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TVS Diodes  
Surface Mount – 3000W > SMDJ series  
Pb e3  
RoHS  
SMDJ Series  
Description  
Uni-directional  
The SMDJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
• 3000W PPPM capability  
at 10/1000μs waveform,  
repetition rate (duty  
cycles):0.01%  
• Low incremental  
surge resistance  
Typical IR less than 2μA when  
VBR min>12V  
Bi-directional  
• For surface mounted  
applications in order to  
optimize board space  
• High temperature to reflow  
soldering guaranteed:  
260°C/30sec  
• VBR @TJ= VBR@25°C x (1+αT  
x (TJ - 25))(αT:Temperature  
Coefficient, typical  
Agency Approvals  
Agency  
• Low profile package  
Agency File Number  
E230531  
Typical failure mode is short  
from over-specified voltage or  
current  
value is 0.1%)  
• Whisker test is conducted  
based on JEDEC JESD201A  
per its table 4a and 4c  
• UL Recognized compound  
meeting flammability rating  
V-0  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
• IEC-61000-4-2 ESD 30kV(Air), • Meet MSL level1, per  
Parameter  
Symbol  
Value  
Unit  
30kV (Contact)  
• ESD protection of data lines  
in accordance with  
J-STD-020, LF maximun peak  
of 260°C  
Peak Pulse Power Dissipation(Fig.2)  
by 10/1000usTest Waveform(Fig.4) (Note  
1),(Note 2) -Single Die Parts  
PPPM  
3000  
W
• Matte tin lead–free plated  
IEC 61000-4-2  
• EFT protection of data lines in  
accordance with  
IEC 61000-4-4  
• Built-in strain relief  
• Halogen free and  
RoHS compliant  
• Pb-free E3 means 2nd level  
interconnect is Pb-free and  
the terminal finish material is  
tin(Sn) (IPC/JEDEC J-STD-  
609A.01)  
Peak Pulse Power Dissipation(Fig.2)  
by 10/1000usTest Waveform(Fig.4) (Note  
1), (Note 2) -Stacked Die Parts (Note 5)  
PPPM  
4000  
W
Power Dissipation on Infinite Heat Sink  
atTL=50OC  
PD  
6.5  
W
A
• Glass passivated chip junction  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
IFSM  
300  
• Fast response time: typically  
less than 1.0ps from  
0V to BV min  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only(Note 4)  
VF  
3.5/5.0  
V
• Excellent clamping capability  
-65 to  
150  
OperatingTemperature Range  
StorageTemperature Range  
TJ  
°C  
°C  
-65 to  
175  
TSTG  
RƟJL  
RƟJA  
Applications  
TypicalThermal Resistance Junction to  
Lead  
15  
75  
°C/W  
°C/W  
TVS components are ideal for the protection of I/O  
Interfaces, VCC bus and other vulnerable circuits used in  
telecom, computer, Industrial and consumer electronic  
applications.  
TypicalThermal Resistance Junction to  
Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
component only, duty cycle=4 per minute maximum.  
4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.  
5. For stacked die component details, please refer to part numbers labeled by * in Electrical  
Characteristics.  
Additional Infomarion  
Functional Diagram  
Bi-directional  
Dꢀꢁꢀsꢂeeꢁ  
Sꢀꢁꢂꢃes  
ꢀesoꢁꢂꢃes  
Cathode  
Anode  
Uni-directional  
© 2020 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: JC.10/29/20  

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