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SMDJ7.5A-HRAT7 PDF预览

SMDJ7.5A-HRAT7

更新时间： 2024-11-14 22:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管电视
页数 文件大小 规格书
8页 809K
描述
TVS DIODE 7.5V 12.9V DO214AB

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中文翻译

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SMDJ7.5A-HRAT7 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-J2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.63其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：9.21 V最小击穿电压：8.33 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：3000 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：6.5 W
最大重复峰值反向电压：7.5 V表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40

SMDJ7.5A-HRAT7 数据手册

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TVS Diodes Datasheet  
SMDJ-HRA Series  
Surface Mount – 3000W  
Pb e3  
RꢀHS  
Description  
The SMDJ-HRA High Reliability series is designed specifically to  
protect sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events. These are  
available with a variety of up-screening options for enhanced  
reliability.  
Uni-directional  
Bi-directional  
Features & Benefits  
■ High reliability devices with  
fabrication and assembly lots  
traceability  
■ Excellent clamping capability  
■ Low incremental surge  
resistance  
■ Enhanced reliability screening  
options are available in  
reference to MIL-PRF-19500.  
Refer to screen process table  
for more detail on screening  
options  
■ Typical IR less than 2µA above  
12V  
■ HighTemperature soldering  
guaranteed: 260°C/40 seconds  
at terminals  
Additional Information  
■ Plastic package has  
Underwriters laboratory  
flammability 94V-O  
■ For surface mounted  
applications in order to  
optimize board space  
■ Meet MSL level1, per  
J-STD-020, LF maximun peak  
of 260°C  
■ Low profile package  
■ Built-in strain relief  
Resources  
Accessories  
Samples  
■ VBR @TJ= VBR@25°C x (1+αT  
x (TJ - 25)) (αT:Temperature  
Coefficient)  
■ Matte tin lead–free plated  
■ Halogen free and RoHS  
compliant  
■ Glass passivated chip junction  
Agency Approvals  
■ 2nd level interconnect is Pb-  
free per IPC/JEDEC J-STD-  
609A.01  
■ 3000W peak pulse power  
capability at 10/1000μs  
waveform, repetition rate (duty  
cycles):0.01%  
Agency  
Agency File Number  
■ Recognized to UL 497B as an  
Isolated Loop Circuit Protector  
E230531  
■ Fast response time: typically  
less than 1.0ps from 0V to BV  
min  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Applications  
Parameter  
Symbol  
Value  
Unit  
Peak Pulse Power Dissipation atTA=25ºC  
by 10/1000µs waveform (Fig.1)(Note 1), (Note 2)  
SMDJ-HRA devices are ideal for the high reliability protection of I/  
O Interfaces, VCC bus and other vulnerable circuits used in  
Telecom, Computer, Industrial and Consumer electronic  
applications.  
PPPM  
3000  
W
Power Dissipation on infinite heat sink at  
TA=50OC  
PM(AV)  
6.5  
W
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
Maximum Instantaneous Forward  
IFSM  
VF  
300  
3.5  
A
V
Functional Diagram  
Voltage at 100A for Unidirectional only  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -65 to 150 °C  
TypicalThermal Resistance Junction to  
Lead  
TypicalThermal Resistance Junction to  
Ambient  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
ꢀi-ꢁireꢂꢃiꢄꢅꢆꢇ  
ꢉꢆꢃꢊꢄꢁe  
Aꢅꢄꢁe  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated above TA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
ꢈꢅi-ꢁireꢂꢃiꢄꢅꢆꢇ  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty  
cycle=4 per minute maximum.  
© 2021 Littelfuse, Inc.  
Specifications are subject to change without notice.  
1
Revised: GD. 05/27/21  
12345678

中文翻译

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SMDJ7.5A-HRAT7 替代型号

型号 品牌 替代类型 描述 数据表
SMDJ7.5A-HR LITTELFUSE

完全替代

 TVS DIODE 7.5V 12.9V DO214AB
SMDJ7.5A-HRA LITTELFUSE

完全替代

 Trans Voltage Suppressor Diode, 3000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO

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