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SMDJ51A-HR PDF预览

SMDJ51A-HR

更新时间： 2024-01-10 21:31:50
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
6页 812K
描述
Trans Voltage Suppressor Diode, 3000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

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中文翻译

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SMDJ51A-HR 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：DO-214AB包装说明：R-PDSO-J2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.39其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：62.7 V最小击穿电压：56.7 V
击穿电压标称值：59.7 V最大钳位电压：82.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：3000 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：6.5 W
认证状态：Not Qualified最大重复峰值反向电压：51 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

SMDJ51A-HR 数据手册

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TransientVoltage Suppression Diodes  
Surface Mount – 3000W > SMDJ-HR Series  
RoHS  
Pb e3  
SMDJ-HR Series  
Description  
The SMDJ-HR High Reliability series is designed  
Uni-directional  
specifically to protect sensitive electronic equipment from  
voltage transients induced by lightning and other transient  
voltage events.  
Bi-directional  
Features  
• For surface mounted  
applications in order to  
optimize board space  
• Low profile package  
• Built-in strain relief  
• Typical IR less than 2µA  
above 12V  
• High temperature  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
• Plastic package has  
underwriters laboratory  
flammability 94V-O  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• 2nd level interconnect is  
Pb-free per IPC/JEDEC  
J-STD-609A.01  
Agency Approvals  
• VBR @TJ= VBR@25°C x (1+αT  
x (TJ - 25))  
AGENCY  
AGENCY FILE NUMBER  
E230531  
(αT:Temperature Coefficient)  
• Glass passivated chip  
junction  
• 3000W peak pulse power  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Fast response time:  
typically less than 1.0ps  
from 0V to BV min  
• Excellent clamping  
capability  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
3000  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10/1000µs waveform  
(Fig.1)(Note 1), (Note 2)  
Power Dissipation on infinite heat  
sink atTA=50OC  
PM(AV)  
IFSM  
6.5  
W
A
• Low incremental surge  
resistance  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
300  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
only  
VF  
3.5  
V
Applications  
Operating Junction and Storage  
Temperature Range  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
Computer, Industrial and Consumer electronic applications.  
TJ, TSTG -65 to 150  
°C  
V
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
Functional Diagram  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
1
Revised: 07/28/15  
123456

中文翻译

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SMDJ51A-HR 替代型号

型号 品牌 替代类型 描述 数据表
SMDJ51A-HRA LITTELFUSE

完全替代

 TVS DIODE 51V 82.4V DO214AB
SMDJ51A LITTELFUSE

类似代替

 Transient Voltage Suppression Diodes

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