Datasheet > SMDJ13

SMDJ13

更新时间： 2024-11-25 20:08:59

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	1078K
描述
Trans Voltage Suppressor Diode, 3000W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMDJ13 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AB
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.57
其他特性：	UL RECOGNIZED	最大击穿电压：	15.9 V
最小击穿电压：	14.4 V	击穿电压标称值：	15.15 V
最大钳位电压：	21.5 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AB	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	3000 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	UNIDIRECTIONAL
最大功率耗散：	6.5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	13 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Matte Tin (Sn)	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

SMDJ13 数据手册

TransientVoltage Suppression Diodes

Surface Mount – 3000W > SMDJ series

Pb e3

RoHS

SMDJ Series

Description

Uni-directional

The SMDJ series is designed specifically to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

• 3000W peak pulse power • Excellent clamping

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

capability

• Low incremental surge

resistance

• For surface mounted

applications in order to

optimize board space

•Typical I_Rless than 2μA

when V_BRmin>12V

• High temperature

to reﬂow soldering

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

• Low proﬁle package

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

guaranteed: 260°C/40sec

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

3000

Unit

Peak Pulse Power Dissipation at

T_A=25ºC by 10/1000µs Waveform

(Fig.2)(Note 1), (Note 2), (Note 5)

Power Dissipation on Inﬁnite Heat

Sink atT_L=50^OC

30kV(Air), 30kV (Contact)

P_D

6.5

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• Built-in strain relief

• Glass passivated chip

junction

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

300

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only(Note 4)

V_F

3.5/5.0

OperatingTemperature Range

StorageTemperature Range

T_J

-65 to 150

-65 to 175

°C

T_STG

TypicalThermal Resistance Junction

to Lead

°C/W

R_θJL

R_θJA

• Fast response time:

typically less than 1.0ps

from 0V to BV min

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

Applications

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only, duty cycle=4 per minute maximum.

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

4. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

Computer, Industrial and Consumer electronic

applications.

5. The P_PPMof stacked-die parts is 4000W and please contact littelfuse for the detail

stacked-die parts.

Functional Diagram

Additional Infomarion

Bi-directional

Datasheet

Samples

Resources

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 11/20/15

12 3 4 5 6

中文翻译

下载PDF

SMDJ13 替代型号

型号	品牌	替代类型	描述	数据表
3KASMC13HE3/57T	VISHAY	功能相似	Trans Voltage Suppressor Diode, 3000W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-
3KASMC13HE3/9AT	VISHAY	功能相似	Trans Voltage Suppressor Diode, 3000W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与SMDJ13相关器件

型号	品牌	获取价格	描述	数据表
SMDJ130	PROTEC	获取价格	Trans Voltage Suppressor Diode, 3000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMDJ130	UNSEMI	获取价格	Surface Mount Transient Voltage Suppressors
SMDJ130	SUNMATE	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE
SMDJ130	YFW	获取价格	Surface Mount Transient Voltage Suppressors (TVS)
SMDJ130	SOCAY	获取价格	Surface Mount Transient Voltage Suppressors (TVS)
SMDJ130	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMDJ130	LGE	获取价格	暂无描述
SMDJ130A	UNSEMI	获取价格	Surface Mount Transient Voltage Suppressors (TVS)
SMDJ130A	LGE	获取价格	暂无描述
SMDJ130A	MDE	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

与SMDJ13相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

42
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

57

产品中心

服务支持

精选活动

关于我们

帮助中心

SMDJ13

SMDJ13 技术参数

SMDJ13 数据手册

SMDJ13 替代型号

与SMDJ13相关器件

与SMDJ13相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMDJ13

SMDJ13 技术参数

SMDJ13 数据手册

SMDJ13 替代型号

与SMDJ13相关器件

与SMDJ13相关文章

您还可以找

您在本页遇到什么问题？