Datasheet > SMDJ110

SMDJ110

更新时间： 2024-11-21 19:53:31

品牌	Logo	应用领域
鲁光 - LGE		局域网光电二极管
页数	文件大小	规格书
4页	2472K
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技术参数
数据手册

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SMDJ110 技术参数

Case Style：	SMC	Ppk(W)：	3000
MIN_(V)：	122.00	MAX_(V)：	149.00
Vwm_(V)：	110.0	Ir_(uA)：	2
Ippm_(A)：	15.31	Vc_(V)：	196.0
class：	Diodes

SMDJ110 数据手册

SMDJ Series

Surface Mount

Transient Voltage Suppressors

Working Voltage: 5.0 to 440 V

Peak Pulse Power: 3000 W

SMC/ DO-214AB

Features

● Glass passivated chip

●

3000 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle):0.01 %

● Low leakage

● Uni and Bidirectional unit

● Excellent clamping capability

● Very fast response time

● RoHS compliant

Mechanical Data

● Case: Molded plastic

● Epoxy: UL 94V-0 rate flame retardant

●

Lead: Solderable per MIL-STD-750, method

2026

● Polarity: Color band denotes cathode end

except Bipolar

● Mounting position: Any

Maximum Ratings(T_A=25℃ unless otherwise noted)

Value

3000

UNIT

Parameter

Symbol

P_PP

Peak power dissipation with a 10/1000μs waveform⁽¹⁾

Peak pulse current wih a 10/1000μs waveform⁽¹⁾

Power dissipation on infinite heatsink at T_L= 75 °C

Peak forward surge current, 8.3 ms single half sine-

I_PP

P_D

See Next Table

6.5

I_FSM

300

wave unidirectional only⁽²⁾

Maximum instantaneous forward voltage at 100A for

unidirectional only⁽³⁾

V_F

3.5/5.0

Operating junction and storage temperature range

T_J, T_STG

55 to +150

°C

Note:

(1)Non-repetitive current pulse per Fig.5 and derated above T_A= 25 °C per Fig.1

(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3)V_F<3.5V for devices of V_BR<200V and V_F<5.0V for devices of V_BR>201V

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170301-P1

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