5秒后页面跳转
SMDJ10A-HRAT7 PDF预览

SMDJ10A-HRAT7

更新时间: 2024-11-21 20:10:11
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
8页 1074K
描述
Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

SMDJ10A-HRAT7 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-J2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.39其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压:12.3 V最小击穿电压:11.1 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:3000 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:6.5 W
最大重复峰值反向电压:10 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SMDJ10A-HRAT7 数据手册

 浏览型号SMDJ10A-HRAT7的Datasheet PDF文件第2页浏览型号SMDJ10A-HRAT7的Datasheet PDF文件第3页浏览型号SMDJ10A-HRAT7的Datasheet PDF文件第4页浏览型号SMDJ10A-HRAT7的Datasheet PDF文件第5页浏览型号SMDJ10A-HRAT7的Datasheet PDF文件第6页浏览型号SMDJ10A-HRAT7的Datasheet PDF文件第7页 
TVS Diodes  
Surface Mount – 3000W > SMDJ-HRA Series  
RoHS  
Pb e3  
SMDJ-HRA Series  
Description  
The SMDJ-HRA High Reliability series is designed  
Uni-directional  
specifically to protect sensitive electronic equipment from  
voltage transients induced by lightning and other transient  
voltage events. These are available with a variety of up-  
screening options for enhanced reliability.  
TVS Diode
Bi-directional  
Agency Approvals  
Features  
• 3000W peak pulse power • Excellent clamping  
AGENCY  
AGENCY FILE NUMBER  
E230531  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
capability  
• Low incremental surge  
resistance  
• High reliability devices  
with fabrication and  
assembly lots traceability  
Typical IR less than 2µA  
above 12V  
• HighTemperature  
soldering guaranteed:  
260°C/10 seconds at  
terminals  
• Plastic package is  
flammability rated V-0 per  
UL 94  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is Pb-  
free and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
• Enhanced reliability  
screening options are  
available in reference to  
MIL-PRF-19500. Refer to  
screen process table for  
more detail on screening  
options  
• For surface mounted  
applications in order to  
optimize board space  
• Low profile package  
• Built-in strain relief  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
Parameter  
Symbol  
PPPM  
Value  
3000  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10/1000µs waveform  
(Fig.1)(Note 1), (Note 2)  
Power Dissipation on infinite heat  
sink atTA=50OC  
PM(AV)  
IFSM  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
300  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
only  
VF  
3.5  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -65 to 150  
°C  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
• Glass passivated chip  
junction  
• Very fast response time  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
Applications  
Functional Diagram  
SMDJ-HRA devices are ideal for the high reliability  
protection of I/O Interfaces, VCC bus and other vulnerable  
circuits used inTelecom, Computer, Industrial and  
Consumer electronic applications.  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2016 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/10/16  

SMDJ10A-HRAT7 替代型号

型号 品牌 替代类型 描述 数据表
SMDJ10A-T7 LITTELFUSE

完全替代

Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMDJ10A-HRA LITTELFUSE

完全替代

暂无描述
SMDJ10A-HR LITTELFUSE

完全替代

暂无描述

与SMDJ10A-HRAT7相关器件

型号 品牌 获取价格 描述 数据表
SMDJ10AQ YANGJIE

获取价格

SMC
SMDJ10A-Q1 ANBON

获取价格

SMC
SMDJ10A-T7 LITTELFUSE

获取价格

Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMDJ10C LITTELFUSE

获取价格

TVS DIODE 10V 17.85V DO214AB
SMDJ10C UNSEMI

获取价格

Surface Mount Transient Voltage Suppressors (TVS)
SMDJ10C SOCAY

获取价格

Surface Mount Transient Voltage Suppressors (TVS)
SMDJ10C LGE

获取价格

瞬态抑制二极管
SMDJ10CA SUNMATE

获取价格

3000W plug-in TVS transient suppression diode SMC 10V
SMDJ10CA UNSEMI

获取价格

Surface Mount Transient Voltage Suppressors (TVS)
SMDJ10CA SOCAY

获取价格

Surface Mount Transient Voltage Suppressors (TVS)