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SMCJ8.0CA-W

更新时间： 2024-11-14 19:43:03
品牌 Logo 应用领域
RECTRON 局域网光电二极管
页数 文件大小 规格书
5页 36K
描述
Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

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SMCJ8.0CA-W 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：DO-214AB包装说明：R-PDSO-C2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.11最大击穿电压：9.83 V
最小击穿电压：8.89 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-C2
JESD-609代码：e3最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：265
极性：BIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified最大重复峰值反向电压：8 V
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SMCJ8.0CA-W 数据手册

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TVS  
RECTRON  
TECHNICAL SPECIFICATION  
TFMCJ  
SERIES  
SEMICONDUCTOR  
SURFACE MOUNT GPP  
TRANSIENT VOLTAGE SUPPRESSOR  
1500 WATT PEAK POWER 5.0 WATTS STEADY STATE  
FEATURES  
* Plastic package has underwriters laboratory  
* Glass passivated chip construction  
* 1500 watt surage capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
DO-214AB  
* Fast response time  
(
)
0.125 3.17  
(
)
)
0.245 6.22  
(
)
0.115 2.92  
(
0.220 5.59  
(
)
0.280 7.11  
(
)
0.260 6.60  
(
)
0.012 0.305  
(
)
0.006 0.152  
(
)
)
0.103 2.62  
Ratings at 25 oC ambient temperature unless otherwise specified.  
(
0.079 2.06  
(
)
0.060 1.52  
(
)
)
0.008 0.203  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
(
)
0.030 0.76  
(
0.004 0.102  
(
)
0.320 8.13  
(
)
0.305 7.75  
Dimensions in inches and (millimeters)  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA suffix for types TFMCJ5.0 thru TFMCJ170  
Electrical characteristics apply in both direction  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
SYMBOL  
VALUE  
UNITS  
Watts  
RATINGS  
P
PPM  
PPM  
AV  
Minimum 1500  
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)  
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )  
I
SEE TABLE 1  
5.0  
Amps  
Watts  
Steady State Power Dissipation at  
TL  
= 75oC (Note 2)  
P
M
(
)
Peak Forward Surge Current 8.3mS single half sine-wave  
superimposed on rated load (JEDEC method) (Note 2,3)  
unidirectional only  
I
FSM  
200  
Amps  
Maximum Instantaneous Forward Voltage at 100A for unidirectional  
only (Note 3,4)  
V
F
SEE NOTE 3,4  
-55 to + 150  
Volts  
0 C  
T
J
, TSTG  
Operating and Storage Temperature Range  
2003-2  
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T  
A
= 25oC per Fig.2.  
2. Mounted on 0.31 X 0.31”( 8.0 X 8.0mm) copper pad to each terminal.  
3. Lead temperature at T  
= 25oC  
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.  
5. V = 3.5V on TFMCJ-5.0 thru TFMCJ-90 devices and V = 5.0V on TFMCJ-100 thru TFMCJ-170 devices.  
L
F
F
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