Datasheet > SMCJ5.0

SMCJ5.0

更新时间： 2024-11-23 21:21:43

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网光电二极管
页数	文件大小	规格书
6页	1057K
描述
Trans Voltage Suppressor Diode, 400W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, SURFACE MOUNT PACKAGE-2

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技术参数
数据手册
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SMCJ5.0 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AB
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.2
Is Samacsys：	N	其他特性：	LOW INDUCTANCE, EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：	7 V	最小击穿电压：	6.4 V
击穿电压标称值：	6.7 V	最大钳位电压：	9.2 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AB
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	400 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL	认证状态：	Not Qualified
最大重复峰值反向电压：	5 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Matte Tin (Sn)	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

SMCJ5.0 数据手册

TransientVoltage Suppression Diodes

Surface Mount – 1500W > SMCJ series

Pb e3

RoHS

SMCJ Series

Description

Uni-directional

The SMCJ series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

• 1500W peak pulse power • Fast response time:

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Excellent clamping

capability

typically less than 1.0ps

from 0V to BV min

• Glass passivated chip

junction

• High temperature

to reﬂow soldering

guaranteed: 260°C/40sec

Agency Approvals

• Low incremental surge

resistance

AGENCY

AGENCY FILE NUMBER

E230531

•Typical I_Rless than 1μA

when V_BRmin>12V

• For surface mounted

applications to optimize

board space

• Low proﬁle package

• Built-in strain relief

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

30kV(Air), 30kV (Contact)

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

1500

Unit

Peak Pulse Power Dissipation at

T_A=25ºC by 10/1000µs Waveform

(Fig.2)(Note 1), (Note 2), (Note 5)

Power Dissipation on Inﬁnite Heat

Sink atT_L=50^OC

P_D

6.5

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

200

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only (Note 4)

V_F

3.5/5.0

OperatingTemperature Range

T_J

-65 to 150

-65 to 175

°C

StorageTemperature Range

T_STG

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

TypicalThermal Resistance Junction

to Lead

°C/W

R_θJL

R_θJA

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

Applications

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only, duty cycle=4 per minute maximum.

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

Computer, Industrial and Consumer electronic

applications.

4. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

5. The P_PPMof stacked-die parts is 2000W and please contact littelfuse for the detail

stacked-die parts.

Functional Diagram

Additional Infomarion

Bi-directional

Datasheet

Samples

Resources

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 11/20/15

12 3 4 5 6

中文翻译

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SMCJ5.0 替代型号

型号	品牌	替代类型	描述	数据表
SMCJ5.0CA	LITTELFUSE	类似代替	Silicon Avalanche Diodes - 1500W Surface Mount Transient Voltage Supressors
SMCJ5.0A	LITTELFUSE	类似代替	Silicon Avalanche Diodes - 1500W Surface Mount Transient Voltage Supressors
SMCJ5.0CA-E3/57T	VISHAY	功能相似	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2

与SMCJ5.0相关器件

型号	品牌	获取价格	描述	数据表
SMCJ5.0 / C	SWST	获取价格	瞬态电压抑制管
SMCJ5.0(C)	BYTESONIC	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMCJ5.0(C)A	FAIRCHILD	获取价格	DEVICES FOR BIPOLAR APPLICATIONS
SMCJ5.0(C)A	BYTESONIC	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMCJ5.0.TB	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB
SMCJ5.0.TF	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB
SMCJ5.0/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional,
SMCJ5.0/7	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB, PLAST
SMCJ5.0/7T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMCJ5.0/9	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB, PLAST

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