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SMCJ30C PDF预览

SMCJ30C

更新时间: 2024-06-27 12:03:34
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
6页 1515K
描述
SMC(DO-214AB)

SMCJ30C 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.19Is Samacsys:N
其他特性:UL RECOGNIZED最大击穿电压:40.7 V
最小击穿电压:33.3 V击穿电压标称值:37 V
最大钳位电压:53.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:BIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

SMCJ30C 数据手册

 浏览型号SMCJ30C的Datasheet PDF文件第2页浏览型号SMCJ30C的Datasheet PDF文件第3页浏览型号SMCJ30C的Datasheet PDF文件第4页浏览型号SMCJ30C的Datasheet PDF文件第5页浏览型号SMCJ30C的Datasheet PDF文件第6页 
SMCJ5.0(A)  
SMCJ440A  
THRU  
TVS DIODE  
FEATURES  
Built-in strain relief  
Glass passivated junction  
Low inductance  
Excellent clamping capability  
Repetition Rate (duty cycle):0.01%  
Fast response time: typically less than 1.0ps  
from 0 Volts to V(BR) for unidirectional types  
Typical IR less than 1mA above 10V  
High temperature soldering guaranteed: 260°C/10 seconds,  
Surface Mount device  
MECHANICAL DATA  
Case: SMC(DO-214AB)  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.21 grams (approximate)  
MAXIMUM RATINGS AND CHARACTERISTICS(TA = 25°C unless otherwise noted)  
Symbol  
Value  
Unit  
W
Peak Power Dissipation at TA=25°C, Tp=1ms (Note 1)  
Peak pulse current with a 10/1000μs waveform (Note 1)  
Steady State Power Dissipation  
PPK  
IPPM  
PD  
Minimum 1500  
See next table  
6.5  
A
W
Typical thermal resistance, junction to ambient (Note5)  
RθJA  
100.0  
°C/W  
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed  
on Rated Load(JEDEC method) (Note 2, 3) - Unidirectional Only  
Typical thermal resistance, junction to ambient (NOTE5)  
IFSM  
RθJL  
200  
20  
A
°C/W  
V
Maximum Instantaneous Forward Voltage at 100.0A for Unidirectional  
Only (Note 4)  
VF  
3.5/5.0  
-55 ~+150  
Operating junction and storage temperature range  
TJ, TSTG  
°C  
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2.  
2. Mounted on 8.0mm2 (.013mm Thick) Copper Pads to Each Terminal.  
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute  
Maximum.  
4. VF=3.5V on SMCJ5.0 thru SMCJ90 Devices and VF=5.0V on SMCJ100 thru SMCJ170 Devices.  
5.Mounted on minimum recommended pad layout.  
Devices for Bipolar Applications  
1. For Bidrectional Use C or CA Suffix for Types SMCJ5.0 through Types SMCJ170.  
2. Electrical Characteristics Apply in Both Directions.  
1 / 6  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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