Datasheet > SMCJ300

SMCJ300

更新时间： 2024-09-24 22:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	1001K
描述
TVS DIODE 300V 510.3V DO214AB

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中文翻译

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SMCJ300 数据手册

TVS Diodes

Surface Mount – 1500W > SMCJ series

Pb e3

RoꢀS

SMCJ Series

Description

The SMCJ series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Uni-directional

Features

Bi-directional

• 1500W peak pulse power • Fast response time:

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Excellent clamping

capability

typically less than 1.0ps

from 0V to BV min

• Glass passivated chip

junction

• High temperature to reﬂow

soldering guaranteed:

260°C/30sec

Agency Approvals

Agency

• Low incremental surge

resistance

Agency File Number

•Typical I_Rless than 1μA

when V_BRmin>12V

• For surface mounted

applications to optimize

board space

• Low proﬁle package

• Built-in strain relief

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC 61000-4-2 ESD

30kV(Air), 30kV (Contact)

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value is

0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol Value

Unit

Peak Pulse Power Dissipation(Fig.2)

by 10/1000usTest Waveform(Fig.4) (Note 1),(Note

2)-Single Die Parts

Peak Pulse Power Dissipation(Fig.2)

by 10/1000usTest Waveform(Fig.4) (Note 1), (Note

2)-Stacked Die Parts (Note 5)

P_PPM

1500

2000

P_PPM

Power Dissipation on Inﬁnite Heat Sink atT_L=50^OC

P_D

6.5

Peak Forward Surge Current, 8.3ms Single Half

Sine Wave (Note 3)

I_FSM

200

Maximum Instantaneous Forward Voltage at 100A

for Unidirectional Only (Note 4)

V_F

T_J

3.5/5.0

• ESD protection of data

lines in accordance with

IEC 61000-4-2

OperatingTemperature Range

-65 to 150 °C

StorageTemperature Range

T_STG-65 to 175 °C

• EFT protection of data

lines in accordance with

IEC 61000-4-4

TypicalThermal Resistance Junction to Lead

TypicalThermal Resistance Junction to Ambient

°C/W

R_θ

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated above T_J(initial) =25^OC per Fig. 3.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty

Applications

cycle=4 per minute maximum.

4. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

5. For stacked die component details, please refer to part numbers labeled by * in Electrical Characteristics.

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

Computer, Industrial and Consumer electronic applications.

Functional Diagram

Additional Infomarion

Bi-directional

Dꢀꢁꢀsꢂeeꢁ

Sꢀꢁꢂꢃes

ꢀesoꢁꢂꢃes

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: JC.10/29/20

12 3 4 5 6

中文翻译

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