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SMCJ180C PDF预览

SMCJ180C

更新时间: 2024-11-05 22:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 电视
页数 文件大小 规格书
6页 1001K
描述
TVS DIODE 180V 306.6V DO214AB

SMCJ180C 数据手册

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TVS Diodes  
Surface Mount – 1500W > SMCJ series  
Pb e3  
RoꢀS  
SMCJ Series  
Description  
The SMCJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Uni-directional  
Features  
Bi-directional  
• 1500W peak pulse power • Fast response time:  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Excellent clamping  
capability  
typically less than 1.0ps  
from 0V to BV min  
• Glass passivated chip  
junction  
• High temperature to reflow  
soldering guaranteed:  
260°C/30sec  
Agency Approvals  
Agency  
• Low incremental surge  
resistance  
Agency File Number  
Typical IR less than 1μA  
when VBR min>12V  
• For surface mounted  
applications to optimize  
board space  
• Low profile package  
• Built-in strain relief  
Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC 61000-4-2 ESD  
30kV(Air), 30kV (Contact)  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value is  
0.1%)  
• Plastic package is  
flammability rated V-0 per  
Underwriters Laboratories  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is Pb-  
free and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol Value  
Unit  
Peak Pulse Power Dissipation(Fig.2)  
by 10/1000usTest Waveform(Fig.4) (Note 1),(Note  
2)-Single Die Parts  
Peak Pulse Power Dissipation(Fig.2)  
by 10/1000usTest Waveform(Fig.4) (Note 1), (Note  
2)-Stacked Die Parts (Note 5)  
PPPM  
1500  
2000  
W
PPPM  
W
Power Dissipation on Infinite Heat Sink atTL=50OC  
PD  
6.5  
W
A
Peak Forward Surge Current, 8.3ms Single Half  
Sine Wave (Note 3)  
IFSM  
200  
Maximum Instantaneous Forward Voltage at 100A  
for Unidirectional Only (Note 4)  
VF  
TJ  
3.5/5.0  
V
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
OperatingTemperature Range  
-65 to 150 °C  
StorageTemperature Range  
TSTG -65 to 175 °C  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
TypicalThermal Resistance Junction to Lead  
TypicalThermal Resistance Junction to Ambient  
15  
75  
°C/W  
°C/W  
Rθ  
Rθ  
JL  
JA  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated above TJ (initial) =25OC per Fig. 3.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty  
Applications  
cycle=4 per minute maximum.  
4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.  
5. For stacked die component details, please refer to part numbers labeled by * in Electrical Characteristics.  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
V
Computer, Industrial and Consumer electronic applications.  
Functional Diagram  
Additional Infomarion  
Bi-directional  
Dꢀꢁꢀsꢂeeꢁ  
Sꢀꢁꢂꢃes  
ꢀesoꢁꢂꢃes  
Cathode  
Anode  
Uni-directional  
© 2020 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: JC.10/29/20  

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