5秒后页面跳转
SMCJ170-E3 PDF预览

SMCJ170-E3

更新时间: 2024-11-06 09:09:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 93K
描述
Trans Voltage Suppressor Diode, 170V V(RWM), Unidirectional,

SMCJ170-E3 数据手册

 浏览型号SMCJ170-E3的Datasheet PDF文件第2页浏览型号SMCJ170-E3的Datasheet PDF文件第3页浏览型号SMCJ170-E3的Datasheet PDF文件第4页浏览型号SMCJ170-E3的Datasheet PDF文件第5页 
SMCJ5.0 thru 188CA  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount TRANSZORB®  
Transient Voltage Suppressors  
Stand-off Voltage 5.0 to 188V  
Peak Pulse Power 1500W  
Cathode Band  
DO-214AB  
(SMC J-Bend)  
0.126 (3.20)  
0.114 (2.90)  
0.245 (6.22)  
0.220 (5.59)  
Mounting Pad Layout  
0.185 MAX.  
(4.69 MAX.)  
0.280 (7.11)  
0.260 (6.60)  
0.126 MIN.  
(3.20 MIN.)  
0.012 (0.305)  
0.006 (0.152)  
0.103 (2.62)  
0.079 (2.06)  
0.060 MIN.  
(1.52 MIN.)  
0.060 (1.52)  
0.030 (0.76)  
Dimensions in inches  
and (millimeters)  
0.008  
(0.203)  
Max.  
0.320 REF  
0.320 (8.13)  
0.305 (7.75)  
Features  
Mechanical Data  
• Underwriters Laboratory Recognition under UL standard  
for safety 497B: Isolated Loop Circuit Protection  
Case: JEDEC DO-214AB molded plastic over  
passivated junction  
• Low profile package with built-in strain relief for  
surface mounted applications  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
• Glass passivated junction  
• Low incremental surge resistance, excellent clamping  
capability  
Polarity: For unidirectional types the band denotes the  
cathode, which is positive with respect to the anode  
under normal TVS operation  
• 1500W peak pulse power capability with a 10/1000µs  
waveform, repetition rate (duty cycle): 0.01%  
• Very fast response time  
Weight: 0.007 oz., 0.21 g  
Flammability: Epoxy is rated UL 94V-0  
• High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Devices for Bidirectional Applications  
For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions.  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
PPPM  
IPPM  
Value  
Minimum 1500  
See Next Table  
200  
Unit  
Peak pulse power dissipation with  
W
a 10/1000µs waveform(1)(2)  
Peak pulse current with a 10/1000µs waveform(1)  
Peak forward surge current 8.3ms single half sine-wave(2)  
uni-directional only  
A
IFSM  
A
Typical thermal resistance, junction to ambient(3)  
RθJA  
RθJL  
75  
15  
°C/W  
°C/W  
°C  
Typical thermal resistance, junction to lead  
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2  
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal  
(3) Mounted on minimum recommended pad layout  
Document Number 88394  
07-Jul-04  
www.vishay.com  
1

与SMCJ170-E3相关器件

型号 品牌 获取价格 描述 数据表
SMCJ170E3/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ170-E31T VISHAY

获取价格

Surface Mount TRANSZORB Transient Voltage Suppressors
SMCJ170-G SENSITRON

获取价格

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ170HE3/9AT VISHAY

获取价格

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ170-M3/57T VISHAY

获取价格

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ170-M3/9AT VISHAY

获取价格

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ170P MCC

获取价格

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC,
SMCJ170PBF DIGITRON

获取价格

Trans Voltage Suppressor Diode
SMCJ170-T3 SENSITRON

获取价格

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ170TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO