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SMCJ17 PDF预览

SMCJ17

更新时间: 2024-02-19 05:36:01
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 1057K
描述
Trans Voltage Suppressor Diode, 1500W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN

SMCJ17 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.6
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMCJ17 数据手册

 浏览型号SMCJ17的Datasheet PDF文件第2页浏览型号SMCJ17的Datasheet PDF文件第3页浏览型号SMCJ17的Datasheet PDF文件第4页浏览型号SMCJ17的Datasheet PDF文件第5页浏览型号SMCJ17的Datasheet PDF文件第6页 
TransientVoltage Suppression Diodes  
Surface Mount – 1500W > SMCJ series  
Pb e3  
RoHS  
SMCJ Series  
Description  
Uni-directional  
The SMCJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Bi-directional  
Features  
• 1500W peak pulse power • Fast response time:  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Excellent clamping  
capability  
typically less than 1.0ps  
from 0V to BV min  
• Glass passivated chip  
junction  
• High temperature  
to reflow soldering  
guaranteed: 260°C/40sec  
Agency Approvals  
• Low incremental surge  
resistance  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Typical IR less than 1μA  
when VBR min>12V  
• For surface mounted  
applications to optimize  
board space  
• Low profile package  
• Built-in strain relief  
Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
30kV(Air), 30kV (Contact)  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Plastic package is  
flammability rated V-0 per  
Underwriters Laboratories  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is  
Pb-free and the terminal  
finish material is tin(Sn)  
(IPC/JEDEC J-STD-  
609A.01)  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
1500  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10/1000µs Waveform  
(Fig.2)(Note 1), (Note 2), (Note 5)  
Power Dissipation on Infinite Heat  
Sink atTL=50OC  
PD  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
IFSM  
200  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only (Note 4)  
VF  
3.5/5.0  
V
OperatingTemperature Range  
TJ  
-65 to 150  
-65 to 175  
°C  
°C  
StorageTemperature Range  
TSTG  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
TypicalThermal Resistance Junction  
to Lead  
°C/W  
°C/W  
RθJL  
RθJA  
15  
75  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
Applications  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
Computer, Industrial and Consumer electronic  
applications.  
V
4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.  
5. The PPPM of stacked-die parts is 2000W and please contact littelfuse for the detail  
stacked-die parts.  
Functional Diagram  
Additional Infomarion  
Bi-directional  
Datasheet  
Samples  
Resources  
Cathode  
Anode  
Uni-directional  
© 2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/20/15  

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