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SMCJ14A-HR PDF预览

SMCJ14A-HR

更新时间: 2024-01-20 00:34:57
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管电视
页数 文件大小 规格书
6页 743K
描述
TVS DIODE 14V 23.2V DO214AB

SMCJ14A-HR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-J2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.3其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压:17.2 V最小击穿电压:15.6 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:6.5 W
最大重复峰值反向电压:14 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SMCJ14A-HR 数据手册

 浏览型号SMCJ14A-HR的Datasheet PDF文件第2页浏览型号SMCJ14A-HR的Datasheet PDF文件第3页浏览型号SMCJ14A-HR的Datasheet PDF文件第4页浏览型号SMCJ14A-HR的Datasheet PDF文件第5页浏览型号SMCJ14A-HR的Datasheet PDF文件第6页 
TVS Diodes  
Surface Mount – 1500W > SMCJ-HR Series  
Pb e3  
SMCJ-HR Series  
RoHS  
Description  
The SMCJ-HR High Reliability series is designed  
specifically to protect sensitive electronic equipment from  
voltage transients induced by lightning and other transient  
voltage events.  
Uni-directional  
Bi-directional  
Agency Approvals  
Features  
• For surface mounted  
applications in order to  
optimize board space  
• Low profile package  
• Built-in strain relief  
Typical IR less than 1µA  
above 12V  
• HighTemperature  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
• Plastic package has  
Underwriters laboratory  
flammability 94V-O  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
2nd level interconnect is  
Pb-free per IPC/JEDEC  
J-STD-609A.01  
Recognized to UL 497B as  
an Isolated Loop Circuit  
Protector  
Agency  
Agency File Number  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
VBR @TJ= VBR@25°C x (1+αT x  
(TJ - 25))  
(αT:Temperature Coefficient)  
Parameter  
Symbol  
PPPM  
Value  
1500  
6.5  
Unit  
W
• Glass passivated chip  
junction  
• 1500W peak pulse power  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Fast response time:  
typically less than 1.0ps  
from 0V to BV min  
• Excellent clamping  
capability  
Peak Pulse Power Dissipation atTA=25ºC by  
10/1000µs waveform (Fig.1)(Note 1), (Note 2)  
Power Dissipation on infinite heat sink at  
PM(AV)  
IFSM  
W
TA=50OC  
Peak Forward Surge Current, 8.3ms Single Half  
Sine Wave (Note 3)  
Maximum Instantaneous Forward Voltage at  
100A for Unidirectional  
only (Note 4)  
Operating Junction and StorageTemperature  
Range  
200  
A
VF  
3.5/5.0  
V
TJ, TSTG -65 to 150 °C  
TypicalThermal Resistance Junction to Lead  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction to  
Ambient  
• Low incremental surge  
resistance  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated above TA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty  
cycle=4 per minute maximum.  
Functional Diagram  
Applications  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
V
Computer, Industrial and Consumer electronic applications.  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2020 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 03/10/20  

SMCJ14A-HR 替代型号

型号 品牌 替代类型 描述 数据表
SMCJ14A LITTELFUSE

完全替代

Silicon Avalanche Diodes - 1500W Surface Mount Transient Voltage Supressors
SMCJ14A-HRAT7 LITTELFUSE

类似代替

TVS DIODE 14V 23.2V DO214AB
SMCJ14A-HRA LITTELFUSE

类似代替

TVS DIODE 14V 23.2V DO214AB

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