Datasheet > SMCJ12C

SMCJ12C

更新时间： 2024-11-01 21:21:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	1057K
描述
Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN

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技术参数
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SMCJ12C 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AB
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.46
Is Samacsys：	N	其他特性：	LOW INDUCTANCE, EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：	15.4 V	最小击穿电压：	12.6 V
击穿电压标称值：	14 V	最大钳位电压：	19.9 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AB
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性：	BIDIRECTIONAL	认证状态：	Not Qualified
最大重复峰值反向电压：	12 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Matte Tin (Sn)	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

SMCJ12C 数据手册

TransientVoltage Suppression Diodes

Surface Mount – 1500W > SMCJ series

Pb e3

RoHS

SMCJ Series

Description

Uni-directional

The SMCJ series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

• 1500W peak pulse power • Fast response time:

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Excellent clamping

capability

typically less than 1.0ps

from 0V to BV min

• Glass passivated chip

junction

• High temperature

to reﬂow soldering

guaranteed: 260°C/40sec

Agency Approvals

• Low incremental surge

resistance

AGENCY

AGENCY FILE NUMBER

E230531

•Typical I_Rless than 1μA

when V_BRmin>12V

• For surface mounted

applications to optimize

board space

• Low proﬁle package

• Built-in strain relief

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

30kV(Air), 30kV (Contact)

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

1500

Unit

Peak Pulse Power Dissipation at

T_A=25ºC by 10/1000µs Waveform

(Fig.2)(Note 1), (Note 2), (Note 5)

Power Dissipation on Inﬁnite Heat

Sink atT_L=50^OC

P_D

6.5

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

200

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only (Note 4)

V_F

3.5/5.0

OperatingTemperature Range

T_J

-65 to 150

-65 to 175

°C

StorageTemperature Range

T_STG

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

TypicalThermal Resistance Junction

to Lead

°C/W

R_θJL

R_θJA

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

Applications

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only, duty cycle=4 per minute maximum.

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

Computer, Industrial and Consumer electronic

applications.

4. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

5. The P_PPMof stacked-die parts is 2000W and please contact littelfuse for the detail

stacked-die parts.

Functional Diagram

Additional Infomarion

Bi-directional

Datasheet

Samples

Resources

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 11/20/15

12 3 4 5 6

中文翻译

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SMCJ12C 替代型号

型号	品牌	替代类型	描述	数据表
SMCJ12CA-TR	STMICROELECTRONICS	功能相似	TRANSILTM

与SMCJ12C相关器件

型号	品牌	获取价格	描述	数据表
SMCJ12-C	SEMTECH	获取价格	TRANSIENT VOLTAGE SUPPRESSORS
SMCJ12C/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 12V V(RWM), Bidirectional,
SMCJ12C/9	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-214AB, PLASTI
SMCJ12C/9A	VISHAY	获取价格	Trans Voltage Suppressor Diode, 12V V(RWM), Bidirectional,
SMCJ12C/9A-E3	VISHAY	获取价格	TRANSIENT SUPPRESSOR DIODE,SINGLE,BIDIRECTIONAL,12V V(RWM),DO-214AB / SMC
SMCJ12C/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-214AB, PLASTI
SMCJ12CA	BOURNS	获取价格	SMCJ Transient Voltage Suppressor Diode Series
SMCJ12CA	FAIRCHILD	获取价格	Transient Voltage Suppressors
SMCJ12CA	LGE	获取价格	Surface Mount TVS
SMCJ12CA	dowosemi	获取价格	瞬态电压抑制器 Transient Voltage Suppressors

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