是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DO-215AB | 包装说明: | R-PDSO-G2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.65 | 其他特性: | LOW INDUCTANCE |
最大击穿电压: | 137 V | 最小击穿电压: | 124 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-215AB |
JESD-30 代码: | R-PDSO-G2 | JESD-609代码: | e3 |
最大非重复峰值反向功率耗散: | 1500 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性: | BIDIRECTIONAL |
最大功率耗散: | 5 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 110 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | Base Number Matches: | 1 |
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