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SMCG33AHE3/9AT PDF预览

SMCG33AHE3/9AT

更新时间： 2024-11-02 19:49:23
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 95K
描述
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN, Transient Suppressor

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中文翻译

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SMCG33AHE3/9AT 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DO-215AB
包装说明：R-PDSO-G2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.17
Is Samacsys：N其他特性：EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, HIGH RELIABILITY
最大击穿电压：40.6 V最小击穿电压：36.7 V
击穿电压标称值：38.65 V最大钳位电压：53.3 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-215AB
JESD-30 代码：R-PDSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：6.5 W
认证状态：Not Qualified最大重复峰值反向电压：33 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30Base Number Matches：1

SMCG33AHE3/9AT 数据手册

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SMCG5.0A thru SMCG188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-215AB (SMCG)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VBR uni-directional  
6.40 V to 231 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VBR bi-directional  
6.40 V to 231 V  
5.0 V to 188 V  
1500 W  
VWM  
PPPM  
PD  
6.5 W  
MECHANICAL DATA  
IFSM (uni-directional only)  
200 A  
Case: DO-215AB (SMCG)  
Molding compound meets UL 94 V-0 flammability rating  
TJ max.  
150 °C  
Base P/N-E3  
- RoHS compliant, commercial grade  
Polarity  
Uni-directional, bi-directional  
DO-215AB (SMCG)  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Package  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMCG188CA).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)  
Peak pulse current with a 10/1000 μs waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Power dissipation on infinite heatsink, TA = 50 °C  
IPPM  
See next table  
200  
A
IFSM  
A
PD  
6.5  
W
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal  
(2)  
Revision: 10-Dec-13  
Document Number: 88457  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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中文翻译

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SMCG33AHE3/9AT 替代型号

型号 品牌 替代类型 描述 数据表
SMCG33A-E3/57T VISHAY

完全替代

 DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG,
SMCJ33A-M3/9AT VISHAY

类似代替

 TVS DIODE 33V 53.3V DO214AB
MSMCGLCE33A MICROSEMI

类似代替

 Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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