Datasheet > SMCG33A-HR

SMCG33A-HR

更新时间： 2024-11-02 21:07:07

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网光电二极管
页数	文件大小	规格书
6页	1146K
描述
Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, SMCG, 2 PIN

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中文翻译

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技术参数
数据手册

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SMCG33A-HR 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-PDSO-L2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.66	其他特性：	EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：	40.6 V	最小击穿电压：	36.7 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-215AB
JESD-30 代码：	R-PDSO-L2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	6.5 W	参考标准：	IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压：	33 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	L BEND	端子位置：	DUAL
Base Number Matches：	1

SMCG33A-HR 数据手册

•ꢀ

Whiskerꢀtestꢀisꢀconductedꢀ •ꢀ

MeetꢀMSLꢀlevel1,ꢀperꢀ

J-STD-020,ꢀLFꢀmaximunꢀ

peakꢀofꢀ260°C

•ꢀ

IEC-61000-4-2ꢀESDꢀ

15kV(Air),ꢀ8kVꢀ(Contact)

ESDꢀprotectionꢀofꢀdataꢀ

lines in accordance with

IECꢀ61000-4-2ꢀ(IEC801-2)

•ꢀ

•ꢀ High-Reliabilityꢀup-

screened for critical

applicationsꢀrequireꢀhigherꢀ

reliabilityꢀperformanceꢀ

andꢀlowꢀinfantꢀmortalityꢀ

failures.

•ꢀ Excellentꢀclampingꢀ

capability

•ꢀ Lowꢀincrementalꢀsurgeꢀ

•ꢀ

EFTꢀprotectionꢀofꢀdataꢀ

lines in accordance with

IECꢀ61000-4-4ꢀ(IEC801-4)

TransientVoltage Suppression Diodes

Surface Mount – 1500W > SMCG-HR series

Pb e3

RoHS

SMCG-HR Series

Description

TheꢀSMCG-HRꢀseriesꢀisꢀdesignedꢀspeciﬁcallyꢀtoꢀprotectꢀ

sensitiveꢀelectronicꢀequipmentꢀfromꢀvoltageꢀtransientsꢀ

inducedꢀbyꢀlightningꢀandꢀotherꢀtransientꢀvoltageꢀevents.

Features

•ꢀ Built-inꢀstrainꢀrelief

•ꢀ Fastꢀresponseꢀtime:ꢀ

typicallyꢀlessꢀthanꢀ1.0psꢀ

fromꢀ0VꢀtoꢀBVꢀmin

•ꢀ 1500Wꢀpeakꢀpulseꢀpowerꢀ

capabilityꢀatꢀ10/1000μs

waveform, repetition rate

(dutyꢀcycles):0.01%

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

resistance

•ꢀ TypicalꢀI_Rless than 1µA

above 12V

•ꢀ V_BR@T_J= V_BR@25°Cꢀxꢀ(1+αT

xꢀ(T_J-ꢀ25))ꢀ(αT:Temperatureꢀ

Coefﬁcient,ꢀtypicalꢀvalueꢀisꢀ

0.1%)

•ꢀ Forꢀsurfaceꢀmountedꢀ

applications to optimize

board space

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

•ꢀ Lꢀbendꢀleadꢀformingꢀgivesꢀ •ꢀ Glassꢀpassivatedꢀchipꢀ

Parameter

Symbol

Value

Unit

bestꢀsolderbilityꢀforꢀHiꢀ

reliabilityꢀapplication

Typicalꢀfailureꢀmodeꢀisꢀ

shortꢀfromꢀover-speciﬁedꢀ

voltageꢀorꢀcurrentꢀ

junction

PeakꢀPulseꢀPowerꢀDissipationꢀatꢀ

T_A=25ºC byꢀ10/1000µsꢀwaveformꢀ

(Fig.2)(Noteꢀ1),ꢀ(Noteꢀ2)ꢀ

•ꢀ Highꢀtemperatureꢀ

solderingꢀguaranteed:ꢀ

260°C/10ꢀsecondsꢀatꢀ

terminals

P_PPM

1500

PowerꢀDissipationꢀonꢀinﬁniteꢀheatꢀ

P_M(AV)

I_FSM

6.5

sinkꢀatꢀT_A=50^OC

PeakꢀForwardꢀSurgeꢀCurrent,ꢀ8.3msꢀ

SingleꢀHalfꢀSineꢀWaveꢀ(Noteꢀ3)

200

basedꢀonꢀJEDECꢀ

JESD201Aꢀperꢀitsꢀtableꢀ4aꢀ

andꢀ4c

MaximumꢀInstantaneousꢀForwardꢀ

Voltageꢀatꢀ100AꢀforꢀUnidirectionalꢀ

onlyꢀ

V_F

3.5

•ꢀ Matteꢀtinꢀlead–freeꢀplated

•ꢀHalogenꢀfreeꢀ

•ꢀRoHSꢀcompliantꢀwithꢀ

exemptionꢀ7aꢀandꢀ7c-I

OperatingꢀJunctionꢀandꢀStorageꢀ

TemperatureꢀRange

T_J, T_STG-65ꢀtoꢀ150

°C

TypicalꢀThermalꢀResistanceꢀJunctionꢀ

toꢀLead

R_uJL

R_uJA

°C/W

•ꢀ2ndꢀlevelꢀinterconnectꢀisꢀ

Pb-freeꢀperꢀIPC/JEDECꢀ

J-STD-609A.01

TypicalꢀThermalꢀResistanceꢀJunctionꢀ

to Ambient

Notes:

Applications

TVS devices are ideal for the protection of I/O Interfaces,

1.ꢀNon-repetitiveꢀcurrentꢀpulseꢀ,ꢀperꢀFig.ꢀ4ꢀandꢀderatedꢀaboveꢀT_A= 25^OCꢀperꢀFig.ꢀ3.

2.ꢀMountedꢀonꢀcopperꢀpadꢀareaꢀofꢀ0.31x0.31”ꢀ(8.0ꢀxꢀ8.0mm)ꢀtoꢀeachꢀterminal.

3.ꢀMeasuredꢀonꢀ8.3msꢀsingleꢀhalfꢀsineꢀwaveꢀorꢀequivalentꢀsquareꢀwaveꢀforꢀunidirectionalꢀ

deviceꢀonly,ꢀdutyꢀcycle=4ꢀperꢀminuteꢀmaximum.

V_CCbus and other vulnerable circuits used inTelecom,

Computer, Industrial and Consumer electronic applications.

Functional Diagram

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 11/09/15

12 3 4 5 6

中文翻译

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与SMCG33A-HR相关器件

型号	品牌	获取价格	描述	数据表
SMCG33A-HRA	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG33A-M3/9AT	VISHAY	获取价格	TVS DIODE 33V 53.3V DO215AB
SMCG33APBF	DIGITRON	获取价格	Trans Voltage Suppressor Diode
SMCG33ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG33C	MICROSEMI	获取价格	SURFACE MOUNT 1500 Watt Transient Voltage Suppressor
SMCG33C	VISHAY	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional,
SMCG33C/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional,
SMCG33C/57	VISHAY	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional,
SMCG33C/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG33C/9AT-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC, SMCG, 2 PIN, Transient

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