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SMCG170CA-E3/57T PDF预览

SMCG170CA-E3/57T

更新时间： 2024-11-20 22:51:11
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 89K
描述
TVS DIODE 170V 275V DO215AB

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SMCG170CA-E3/57T 数据手册

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SMCG5.0A thru SMCG188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMCG (DO-215AB)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VBR uni-directional  
6.40 V to 231 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VBR bi-directional  
6.40 V to 231 V  
5.0 V to 188 V  
1500 W  
VWM  
PPPM  
PD  
6.5 W  
MECHANICAL DATA  
IFSM (uni-directional only)  
200 A  
Case: SMCG (DO-215AB)  
Molding compound meets UL 94 V-0 flammability rating  
TJ max.  
150 °C  
Base P/N-E3  
-
RoHS compliant, industrial grade  
Polarity  
Uni-directional, bi-directional  
SMCG (DO-215AB)  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Package  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMCG188CA).  
Electrical characteristics apply in both directions.  
Polarity: for uni-directional types the band denotes cathode  
end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)  
Peak pulse current with a 10/1000 μs waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Power dissipation on infinite heatsink, TA = 50 °C  
IPPM  
See next table  
200  
A
IFSM  
A
PD  
6.5  
W
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal  
(2)  
Revision: 16-Jan-18  
Document Number: 88457  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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SMCG170CA-E3/57T 替代型号

型号 品牌 替代类型 描述 数据表
SMCG170CAHE3/57T VISHAY

完全替代

 TVS DIODE 170V 275V DO215AB
SMCG170CAHE3/9AT VISHAY

完全替代

 DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG,

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SMCG170CAE3/TR MICROSEMI

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 		TVS DIODE 170V 275V DO215AB
SMCG170CA-HE3/57T VISHAY

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SMCG170CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Bidirectional, 1 Element, Silicon, DO-
SMCG170CATRE3 MICROSEMI

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