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SMC6G50US60 PDF预览

SMC6G50US60

更新时间: 2024-11-01 19:58:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网电动机控制开关晶体管
页数 文件大小 规格书
10页 442K
描述
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel

SMC6G50US60 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-T21
Reach Compliance Code:unknown风险等级:5.84
其他特性:HIGH SPEED SWITCHING最大集电极电流 (IC):50 A
集电极-发射极最大电压:600 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-PUFM-T21
元件数量:7端子数量:21
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:UPPER晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):184 ns
标称接通时间 (ton):90 nsVCEsat-Max:2.7 V
Base Number Matches:1

SMC6G50US60 数据手册

 浏览型号SMC6G50US60的Datasheet PDF文件第2页浏览型号SMC6G50US60的Datasheet PDF文件第3页浏览型号SMC6G50US60的Datasheet PDF文件第4页浏览型号SMC6G50US60的Datasheet PDF文件第5页浏览型号SMC6G50US60的Datasheet PDF文件第6页浏览型号SMC6G50US60的Datasheet PDF文件第7页 
Preliminary  
COMPACT & COMPLEX MODULE  
SMC6G50US60  
FEATURES  
* High Speed Switching  
* Low Saturation Voltage  
@ VCE(sat) = 2.1 V (typ)  
* High Input Impedance  
* Short Circuit Min. 10uS Rated  
@ VCC=300V, VGE=15V, TC=100  
* Built in 3 Rectifier Circuit  
Package code : 21-PM-BA  
P
P1  
APPLICATIONS  
GU  
EU  
GV  
GW  
R
S
T
EV  
U
EW  
V
* AC & DC Motor controls  
* General Purpose Inverters  
* Robotics , Servo Controls  
W
_
GU  
_
GV  
_
GW  
N
A
E
Internal Circuit Diagram  
)
ABSOLUTE MAXIMUM RATINGS (Tc = 25  
Symbol Characteristics  
Rating  
Unit  
VCES  
VGES  
IC  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
600  
20  
V
V
A
A
W
A
A
V
A
A
Inverter  
Collector Current @ Tc = 25  
Pulsed Collector Current  
50  
ICM (1)  
PC  
100  
Maximum Power Dissipation @Tc = 25  
Diode Continuous Forward Current @ Tc = 25  
Diode Maximum Forward Current  
Repetitive Peak Reverse Voltage  
Average Output Rectified Current  
Surge Forward Current  
200  
50  
IF  
IFM  
100  
1200  
80  
VRRM  
IO  
Converter  
Common  
IFSM  
850  
@ 1 Cycle at 60Hz, Peak value Non-Repetitive  
Operating Junction Temperature  
Storage Temperature Range  
Tj  
-40 ~ 150  
-40 ~ 125  
2500  
Tstg  
Viso  
Isolation Voltage @ AC 1 min  
V
Mounting Torque @ Mounting part screw :M4  
2
N.m  
Notes: (1) Repetitive Rating : Pulse width Limited by Max.Junction Temperature  
Rev.B  
1999 Fairchild Semiconductor Corporation  

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