Datasheet > 二极管 > 瞬态抑制器> SMBJP6KE10CE3TR

SMBJP6KE10CE3TR

更新时间： 2023-02-26 16:09:45

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管瞬态抑制器
页数	文件大小	规格书
4页	222K
描述
Trans Voltage Suppressor Diode, 600W, 8.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

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SMBJP6KE10CE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	DO-215AA	包装说明：	R-PDSO-G2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.5	Is Samacsys：	N
最大击穿电压：	11 V	最小击穿电压：	9 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-215AA
JESD-30 代码：	R-PDSO-G2	最大非重复峰值反向功率耗散：	600 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	1.38 W	最大重复峰值反向电压：	8.1 V
表面贴装：	YES	技术：	AVALANCHE
端子形式：	GULL WING	端子位置：	DUAL
Base Number Matches：	1

SMBJP6KE10CE3TR 数据手册

SMBJP6KE6.8 thru SMBJP6KE200CA, e3 and

SMBGP6KE6.8 thru SMBGP6KE200CA, e3

600 Watt TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This SMBJP6KE and SMBGP6KE series is an economical surface mount version of

the popular P6KE axial-leaded series of 600 W Transient Voltage Suppressors

(TVSs). It is available in both unidirectional and bi-directional configurations for

protecting voltage-sensitive components from destruction or degradation. Response

time of clamping action is virtually instantaneous. As a result, they may also be used

effectively for protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for

inductive switching environments and induced RF. They can also be used for

protecting other sensitive components from secondary lightning effects per IEC61000-

4-5 and class levels defined herein. Microsemi also offers numerous other TVS

products to meet higher and lower power demands and special applications.

NOTE: All SMB series are

equivalent to prior SMS package

identifications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical TVS series for surface mount

•

Suppresses transients up to 600 watts @ 10/1000

µs (see Figure 1)

Available in both unidirectional and bidirectional

(add C or CA suffix to part number for bidirectional)

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

•

Selections for 6.8 to 200 volts breakdown (V_BR

)

•

Protection from switching transients & induced RF

Fast response

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z&

I_R(in the operating direction for unidirectional or both

directions for bidirectional)

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: SMBJ(G)P6KE6.8 to 130A or CA

Class 2: SMBJ(G)P6KE6.8 to 68A or CA

Class 3: SMBJ(G)P6KE6.8 to 36A or CA

Class 4: SMBJ(G)P6KE6.8 to 18A or CA

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers.

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

•

Axial-lead (thru-hole) equivalents available as P6KE6.8

to P6KE200CA (consult factory for other options)

Class 1: SMBJ(G)P6KE6.8 to 43A or CA

Class 2: SMBJ(G)P6KE6.8 to 22A or CA

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding an “e3”

suffix.

MAXIMUM RATINGS

• Peak Pulse Power dissipation at 25^oC: 600 watts at

10/1000 μs (also see Fig 1,2, and 3).

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.01%

•

FINISH: Tin-Lead plated or RoHS Compliant

annealed matte-tin plating over copper and readily

solderable per MIL-STD-750, method 2026

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^oC to +150^oC

MARKING: Body marked without SMBJ or SMBG

part number prefix, e.g. P6KE6.8A, P6KE6.8Ae3,

P6KE36, P6KE200CA, P6KE200CAe3, etc.

• Thermal resistance: 25 ^ºC/W junction to lead, or 90^ºC/W

junction to ambient when mounted on FR4 PC board (1oz

Cu) with recommended footprint (see last page)

•

POLARITY: Band denotes cathode. Bidirectional

not marked

• Steady-State Power dissipation: 5 watts at T_L= 25^oC, or

1.38 watts at T_A= 25^ºC when mounted on FR4 PC board

with recommended footprint

• Forward Voltage at 25^oC: 3.5 Volts maximum @ 50 Amp

peak impulse of 8.3 ms half-sine wave (unidirectional

only)

• Solder temperatures: 260^oC for 10 s (maximum)

WEIGHT: 0.1 grams (approximate)

•

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape, 750 per 7 inch reel or 2500 per

13 inch reel (add “TR” suffix to part number)

•

See package dimensions on last page

6-21-2007 Rev C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与SMBJP6KE10CE3TR相关器件

型号	品牌	获取价格	描述	数据表
SMBJP6KE10C-TP	MCC	获取价格	Trans Voltage Suppressor Diode,
SMBJP6KE10C-TP-HF	MCC	获取价格	Trans Voltage Suppressor Diode,
SMBJP6KE10CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBJP6KE10E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE10-TP	MCC	获取价格	Trans Voltage Suppressor Diode,
SMBJP6KE10-TP-HF	MCC	获取价格	暂无描述
SMBJP6KE11	ETC	获取价格	Transient Voltage Suppressor
SMBJP6KE110	ETC	获取价格	Transient Voltage Suppressor
SMBJP6KE110A	MCC	获取价格	Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt
SMBJP6KE110A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 94V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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