是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMB, 2 PIN | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.1 | Is Samacsys: | N |
其他特性: | UL RECOGNIZED | 最大击穿电压: | 12.2 V |
最小击穿电压: | 10 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AA | JESD-30 代码: | R-PDSO-C2 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性: | BIDIRECTIONAL | 最大功率耗散: | 5 W |
最大重复峰值反向电压: | 9 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJ9.0CTRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 9V V(RWM), Bidirectional, | |
SMBJ9.0D / CD | SWST |
获取价格 |
瞬态电压抑制管 | |
SMBJ9.0E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-21 | |
SMBJ9.0-E3/52 | VISHAY |
获取价格 |
TVS DIODE 9V 16.9V DO214AA | |
SMBJ9.0-E3/5B | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 9V V(RWM), Unidirectional, | |
SMBJ9.0E3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-21 | |
SMBJ9.0E3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-21 | |
SMBJ9.0E3TR | MICROSEMI |
获取价格 |
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 | |
SMBJ9.0-G | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-21 | |
SMBJ9.0HE3/52 | VISHAY |
获取价格 |
TVS DIODE 9V 16.9V DO214AA |