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SMBJ8.0D-M3/H

更新时间： 2024-11-04 14:28:27
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 92K
描述
Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN

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SMBJ8.0D-M3/H 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：R-PDSO-C2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：12 weeks风险等级：1.97
Is Samacsys：N其他特性：EXCELLENT CLAMPING CAPABILITY
最大击穿电压：9.69 V最小击穿电压：9.03 V
击穿电压标称值：9.36 V最大钳位电压：13.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性：UNIDIRECTIONAL
最大功率耗散：1 W最大重复峰值反向电压：8 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
Base Number Matches：1

SMBJ8.0D-M3/H 数据手册

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SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
•
3.5 %: very tight VBR tolerance  
• Low leakage current  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a 10/1000 μs  
waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
DO-214AA (SMBJ)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRIMARY CHARACTERISTICS  
VBR (uni-directional)  
BR (bi-directional)  
WM (uni-directional)  
6.5 V to 228 V  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
V
6.5 V to 145 V  
5.0 V to 188 V  
5.0 V to 120 V  
600 W  
V
VWM (bi-directional)  
TYPICAL APPLICATIONS  
PPPM  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFETs, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
PD at TM = 50 °C  
5.0 W  
PD at TA = 25 °C  
1.0 W  
TJ max.  
150 °C  
MECHANICAL DATA  
Polarity  
Uni-directional, bi-directional  
DO-214AA (SMBJ)  
Case: DO-214AA (SMBJ)  
Package  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
industrial grade  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTIONAL APPLICATIONS  
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).  
Electrical characteristics apply in both directions.  
Polarity: for uni-directional types the band denotes cathode  
end, no cathode band on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
W
(1)  
Peak pulse power dissipation  
Peak pulse current  
with a 10/1000 μs waveform  
with a 10/1000 μs waveform  
TM = 50 °C  
PPPM  
(1)  
IPPM  
See next table  
5.0  
A
(2)  
PD  
Power dissipation  
W
(3)  
TA = 25 °C  
PD  
1.0  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Power dissipation mounted on infinite heatsink  
Power dissipation mounted on minimum recommended pad layout  
Revision: 10-Sep-15  
Document Number: 87606  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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