Datasheet > SMBJ8.0A

SMBJ8.0A

更新时间： 2024-11-03 06:12:27

品牌	Logo	应用领域
顺烨 - SHUNYE		二极管光电二极管局域网
页数	文件大小	规格书
4页	410K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMBJ8.0A 数据手册

SMBJ5.0 THRU SMBJ170CA

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Breskdown voltage: 5.0-170 Volts Peak pulse power: 600 Wallts

FEATURE

Optimzed for LAN protection applications

DO-214AA

Ideal for ESD protection of data lines in accordance

with IEC 1000-4-2(IEC801-2)

Ideal for EFT protection of data lines in accordance

with IEC1000-4-4(IEC801-2)

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

0.155(3.94)

0.130(3.30)

0.086 (2.20)

0.077 (1.95)

Glass passivated junction

600w peak pulse power capability

Excellent clamping capability

Low incremental xurge resistance

Fast response time:typically less than 1.0ps from 0v to

V(BR) min

High temperature soldering guaranteed:

265 C/10S at terminals

0.180(4.57)

0.160(4.06)

0.012(0.305)

0.006(0.152)

0.122(3.12)

0.110(2.82)

MECHANICAL DATA

Case: JEDEC DO-214AA molded plastic body over

passivated junction

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

Terminals: Solder plated , solderable per MIL-STD 750,

method 2026

0.220(5.59)

0.205(5.21)

Polarity: Color band denotes cathode except for

bidirectional types

Mounting Position: Any

Weight: 0.005 ounce,0.138 grams

Dimensions in inches and (millimeters)

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bidirectional use suffix C or CA for types SMBJ5.0 thru SMBJ170 (e.g. SMBJ5.0C,SMBJ170CA)

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

SYMBOLS

VALUE

UNITS

PPPM

IFSM

Peak pulse power dissipation with a 10/1000ms wavetorm(NOTE 1,2,FIG.1)

Minimum 600

100.0

Watts

Amps

Watts

Volts

Peak forward surge current

(Note 1,2,3)

IPPM

Peak pulse current with a 10/1000ms waveform(NOTE 1)

Steady state power dissapation (Note 3)

See Table 1

5.0

PM(AV)

Maximum instantaneous forward voltage at 50A(Note 3,4) unidirectional only

Operating junction and storage temperature range

3.5/5.0

TSTG,TJ

-55 to + 150

Notes: 1.Non-repetitive current pulse,per Fig.3 and derated above TA=25 C per Fig.2

2.Mounted on 5.0mm²copper pads to each terminal

3.Measured on 8.3ms single half sine-wine.For uni-directional devices only.

4.VF=3.5V on SMB-5.0 thru SMB-90 devices and VF=5.0V on SMB-100 thru SMB-170 devices

www.shunyegroup.com

12 3 4

中文翻译

下载PDF

与SMBJ8.0A相关器件

型号	品牌	获取价格	描述	数据表
SMBJ8.0A / CA	SWST	获取价格	瞬态电压抑制管
SMBJ8.0A/5	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTI
SMBJ8.0A-13-F	DIODES	获取价格	600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ8.0A-AT/TR13	YAGEO	获取价格	Trans Voltage Suppressor Diode,
SMBJ8.0AD / CAD	SWST	获取价格	瞬态电压抑制管
SMBJ8.0AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0A-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
SMBJ8.0A-E3/2C	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0A-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0A-E3/52	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ,

与SMBJ8.0A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

6
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

30
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

29

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ8.0A

SMBJ8.0A 数据手册

与SMBJ8.0A相关器件

与SMBJ8.0A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ8.0A

SMBJ8.0A 数据手册

与SMBJ8.0A相关器件

与SMBJ8.0A相关文章

您还可以找

您在本页遇到什么问题？