Datasheet > SMBJ75C

SMBJ75C

更新时间： 2024-11-17 14:47:43

品牌	Logo	应用领域
鲁光 - LGE		瞬态抑制二极管
页数	文件大小	规格书
4页	2830K
描述
瞬态抑制二极管

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中文翻译

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技术参数
数据手册

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SMBJ75C 技术参数

Case Style：	SMB	Ppk(W)：	600
MIN_(V)：	83.30	MAX_(V)：	102.00
Vwm_(V)：	75.0	Ir_(uA)：	1
Ippm_(A)：	4.48	Vc_(V)：	134.0
class：	Diodes

SMBJ75C 数据手册

SMBJ Series

Transient Voltage Suppressors

Working Voltage: 5.0 to 440 V

Peak Pulse Power: 600 W

SMB/ DO-214AA

Features

Glass passivated chip

600 W peak pulse power capability with a

10/1000 ȝs waveform, repetitive rate (duty

cycle):0.01 %

Low leakage

Uni and Bidirectional unit

Excellent clamping capability

Very fast response time

RoHS compliant

Mechanical Data

Case: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Solderable per MIL-STD-750, method

2026

Polarity: Color band denotes cathode end

except Bipolar

Mounting position: Any

Maximum Ratings(T_A=25ɗ unless otherwise noted)

Value

600

UNIT

Parameter

Symbol

Peak power dissipation with a 10/1000ȝs waveform⁽¹⁾

P_PP

Peak pulse current wih a 10/1000ȝs waveform⁽¹⁾

Power dissipation on infinite heatsink at T_L= 75 °C

Peak forward surge current, 8.3 ms single half sine-

I_PP

P_D

See Next Table

5.0

I_FSM

100

wave unidirectional only⁽²⁾

Maximum instantaneous forward voltage at 50 A for

unidirectional only⁽³⁾

V_F

3.5/5.0

Operating junction and storage temperature range

T_J, T_STG

–55 to +150

°C

Note:

(1)Non-repetitive current pulse per Fig.5 and derated above T_A= 25 °C per Fig.1

(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3)V_F<3.5V for devices of V_BR<200V and V_F<5.0V for devices of V_BR>201V

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20181022-P1

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