Datasheet > SMBJ6.8A

SMBJ6.8A

更新时间： 2024-09-28 17:14:39

品牌	Logo	应用领域
友台半导体 - UMW		电视
页数	文件大小	规格书
4页	581K
描述
ESD/TVS 管

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数据手册

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SMBJ6.8A 数据手册

UMW

UMW SMBJ5.0A(CA) THRU SMBJ188A(CA)

5V-188V 600W

FEATURES

SMB(DO-214AA)

• Low profile package

Cathode Band

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

0.086(2.20)

0.077(1.95)

0.155(3.94)

0.130(3.30)

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

0.180(4.57)

0.160(4.06)

• Excellent clamping capability

• Very fast response time

0.012(0.305)

0.006(0.152)

• Low incremental surge resistance

0.096(2.44)

0.084(2.13)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

0.060(1.52)

0.030(0.76)

0.008(0.2)

0(0)

0.220(5.59)

0.200(5.10)

MECHANICAL DATA

Case: SMB (DO-214AA)

Dimensions in inches and (millimeters)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified

PRIMARY CHARACTERISTICS

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

V_BR(bi-directional)

6.4 V to 231 V

5.0 V to 188 V

600 W

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

V_BR(uni-directional)

V_WM

P_PPM

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

I_FSM(uni-directional only)

T_Jmax.

100 A

150 °C

Polarity

Uni-directional, bi-directional

SMB (DO-214AA)

Package

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

P_PPM

I_PPM

I_FSM

See next table

100

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

www.umw-ic.com

友台半导体有限公司

12 3 4

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