Datasheet > SMBJ6.5D-M3/H

SMBJ6.5D-M3/H

更新时间： 2024-02-21 22:45:59

品牌	Logo	应用领域
威世 - VISHAY		局域网光电二极管
页数	文件大小	规格书
5页	92K
描述
Trans Voltage Suppressor Diode, 600W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN

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中文翻译

获取价格

技术参数
数据手册

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SMBJ6.5D-M3/H 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-PDSO-C2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
Factory Lead Time：	12 weeks	风险等级：	1.39
Is Samacsys：	N	其他特性：	EXCELLENT CLAMPING CAPABILITY
最大击穿电压：	7.87 V	最小击穿电压：	7.33 V
击穿电压标称值：	7.6 V	最大钳位电压：	11 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AA
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	600 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	1 W	最大重复峰值反向电压：	6.5 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
Base Number Matches：	1

SMBJ6.5D-M3/H 数据手册

SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

•

3.5 %: very tight V_BRtolerance

• Low leakage current

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

DO-214AA (SMBJ)

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

PRIMARY CHARACTERISTICS

V_BR(uni-directional)

_BR(bi-directional)

_WM(uni-directional)

6.5 V to 228 V

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

6.5 V to 145 V

5.0 V to 188 V

5.0 V to 120 V

600 W

V_WM(bi-directional)

TYPICAL APPLICATIONS

P_PPM

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFETs, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

P_Dat T_M= 50 °C

5.0 W

P_Dat T_A= 25 °C

1.0 W

T_Jmax.

150 °C

MECHANICAL DATA

Polarity

Uni-directional, bi-directional

DO-214AA (SMBJ)

Case: DO-214AA (SMBJ)

Package

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

- halogen-free, RoHS-compliant, and

industrial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

DEVICES FOR BI-DIRECTIONAL APPLICATIONS

For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).

Electrical characteristics apply in both directions.

Polarity: for uni-directional types the band denotes cathode

end, no cathode band on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

600

UNIT

(1)

Peak pulse power dissipation

Peak pulse current

with a 10/1000 μs waveform

T_M= 50 °C

P_PPM

(1)

I_PPM

See next table

5.0

(2)

P_D

Power dissipation

(3)

T_A= 25 °C

P_D

1.0

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Notes

(1)

(2)

(3)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Power dissipation mounted on infinite heatsink

Power dissipation mounted on minimum recommended pad layout

Revision: 10-Sep-15

Document Number: 87606

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SMBJ6.5D-M3/H相关器件

型号	品牌	获取价格	描述	数据表
SMBJ6.5-E3/52	VISHAY	获取价格	TVS DIODE 6.5V 12.3V DO214AA
SMBJ6.5-E3/5B	VISHAY	获取价格	TVS DIODE 6.5V 12.3V DO214AA
SMBJ6.5E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ6.5-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ6.5HE3/52	VISHAY	获取价格	TVS DIODE 6.5V 12.3V DO214AA
SMBJ6.5HE3/5B	VISHAY	获取价格	TVS DIODE 6.5V 12.3V DO214AA
SMBJ6.5-M3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ6.5-M3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ6.5T1	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 600W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ6.5TR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2

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