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SMBJ6.5A PDF预览

SMBJ6.5A

更新时间： 2024-02-18 07:48:27
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管光电二极管局域网
页数 文件大小 规格书
5页 355K
描述
SMBJ Transient Voltage Suppressor Diode Series

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中文翻译

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SMBJ6.5A 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：DO-214AA包装说明：R-PDSO-C2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.62最大击穿电压：8.82 V
最小击穿电压：7.22 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：265
极性：BIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SMBJ6.5A 数据手册

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Features  
Applications  
■ RoHS compliant*  
■ IEC 61000-4-2 ESD (Min. Level 4)  
■ IEC 61000-4-4 EFT  
■ Surface Mount SMB package  
■ Standoff Voltage: 5.0 to 170 volts  
■ Power Dissipation: 600 watts  
■ IEC 61000-4-5 Surge  
SMBJ Transient Voltage Suppressor Diode Series  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)  
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown  
Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices  
from 0 V to Minimum Breakdown Voltage.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Minimum Peak Pulse Power Dissipation (T = 1 ms)  
P
P
600  
Watts  
PK  
Peak Forward Surge Current  
8.3 ms Single Half Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
100  
Amps  
FSM  
(Note 3)  
Steady State Power Dissipation @ TL = 75 °C  
P
5.0  
Watts  
Volts  
M(AV)  
Maximum Instantaneous Forward Voltage @ I = 50 A  
PP  
(Note 5)  
V
F
J
(For Unidirectional Units Only)  
Operating Temperature Range  
Storage Temperature Range  
T
-55 to +150  
-55 to +175  
°C  
°C  
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.  
5.  
V
= 3.5 V on SMBJ5.0A through SMBJ90A and V = 5.0 V on SMBJ100A through SMBJ170A.  
F
F
How to Order  
SMBJ 5.0 CA  
Package  
SMBJ = SMA/DO-214AA  
Working Peak Reverse Voltage  
5.0 = 5.0 V  
(Volts)  
RWM  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
Asia-Pacific:  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
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SMBJ6.5A 替代型号

型号 品牌 替代类型 描述 数据表
SMBJ6.5A-13-F DIODES

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