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SMBJ58C PDF预览

SMBJ58C

更新时间: 2024-01-08 14:49:36
品牌 Logo 应用领域
晨启 - SEMITECH 二极管
页数 文件大小 规格书
6页 138K
描述
600W Surface Mount Transient Voltage Suppressors

SMBJ58C 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.29其他特性:UL RECOGNIZED
最大击穿电压:78.7 V最小击穿电压:64.4 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:5 W最大重复峰值反向电压:58 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10

SMBJ58C 数据手册

 浏览型号SMBJ58C的Datasheet PDF文件第2页浏览型号SMBJ58C的Datasheet PDF文件第3页浏览型号SMBJ58C的Datasheet PDF文件第4页浏览型号SMBJ58C的Datasheet PDF文件第5页浏览型号SMBJ58C的Datasheet PDF文件第6页 
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD  
Email:sales@semitech.cn  
Tel:+86-21-64605419 Fax:+86-21-64606443  
SMBJ5.0 --- SMBJ440CA  
600W Surface Mount  
Transient Voltage  
Suppressors  
Features  
Working peak reverse voltage range – 5.0V to 440V.  
Peak power dissipation 600W @10 x 1000 us Pulse  
Low profile package.  
Excellent clamping capability.  
Glass passivated junction.  
Fast response time: typically less than 1 ns for Uni-direction.  
Less than 5 ns for Bi-direction, from 0 Volts to BV min  
Typical IR less than 1uA above 10V.  
Plastic material has UL flammability classification 94V-O  
RoHS compliant in lead-free versions  
Mechanical Characteristics  
CASE: Void-free, JEDEC DO-214AA Molded Plastic over glass passivated junction..  
Mounting Position: Any  
Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device.  
Terminal: Solder plated, solderable per MIL-STD-750, Method 2026  
Maximum Ratings And Characteristics @ 25°C Ambient Temperature (unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
Min 600  
Units  
W
Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, 2, FIG.1)  
Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3)  
Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on  
Rated Load, (JEDEC Method) (Note 2. 3)  
IPPM  
See Table 1  
Amps  
IFSM  
100  
Amps  
Operating Junction Temperature Range  
TJ  
-55 to 150  
-55 to 150  
°C  
°C  
Storage Temperature Range  
TSTG  
Notes:  
1. Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig.2.  
2. Mounted on 5.0mm2 (0.03mm thick) Copper Pads to each terminal.  
3. 8.3 ms single half sine-wave, or equivalent square wave, Duty cycle=4 pluses per minute maximum.  
WWW.SEMITECH.CN  

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