Datasheet > SMBJ510A

SMBJ510A

更新时间： 2025-07-17 19:55:03

品牌	Logo	应用领域
海德 - HDSEMI		二极管电视
页数	文件大小	规格书
7页	2672K
描述
SMB封装TVS二极管

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中文翻译

获取价格

数据手册

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SMBJ510A 数据手册

RoHS

SMBJ SERIES

COMPLIANT

SMBG Plastic-Encapsulate Diodes

Transient Voltage Suppressor Diodes

Features

●

P_PPM

600W

5.0V- 550V

●V_RWM

SMBG

●

Low power loss, high efficiency

●Excellent clamping capability

Applications

●

Protect sensitive circuit from damage by high voltage transients

Lighting, ESD transient voltage protection of IC, system

Inductive switching load protection of IC, system

Electrical Fast Transient Immunity protection of IC, system

Bi-directional

Uni-direction

Mechical Data

●

Case:

JEDEC DO-214AA molded plastic

Molding compound: UL flammability classification rating 94V-0

● Terminals: Solder plated, solderable per MIL- STD-202, Method 208

●

Polarity: Color band denotes cathode end

Max

600

Item

Symbol

Conditions

Unit

P_PPM

Peak pulse power dissipation

with a 10/1000us waveform

I_PPM

Peak pulse current(1)

See Next Table

P_D

5.0

Power dissipation

On infinite heat sink at T_L=75℃

I_FSM

100

Peak forward surge current(2)

8.3 ms single half sine-wave unidirectional only

Operating junction and

storage temperature range

T_J,T_STG

℃

-55 to +150

Electrical Characteristics（T =25℃ Unless otherwise specified）

Symbol

Max

Item

Unit

Conditions

Maximum instantaneous forward

Voltage (2)

V_F

3.5/5.0

at 50A for unidirectional only

R_θJL

R_θJA

R_θJC

℃/W

Between junction and lead

Between junction and Ambient

Between junction and Case

100

Thermal resistance

Notes:

(1)

Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25℃per Fig.2.

(2)

VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

HIGH DIODE SEMICONDUCTOR

12 3 4 5 6 7

中文翻译

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