SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
®
Surface-Mount TRANSZORB Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
•
3.5 %: very tight VBR tolerance
• Low leakage current
• Available in unidirectional and bidirectional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
SMB (DO-214AA)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
LINKS TO ADDITIONAL RESOURCES
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
3
D
3D Models
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VBR (unidirectional)
BR (bidirectional)
WM (unidirectional)
6.5 V to 228 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
V
6.5 V to 145 V
5.0 V to 188 V
5.0 V to 120 V
600 W
V
VWM (bidirectional)
PPPM
MECHANICAL DATA
PD at TM = 50 °C
5.0 W
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
PD at TA = 25 °C
1.0 W
Base P/N-M3
industrial grade
- halogen-free, RoHS-compliant, and
TJ max.
150 °C
Polarity
Unidirectional, bidirectional
SMB (DO-214AA)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Package
M3 suffix meets JESD 201 class 2 whisker test
DEVICES FOR BIDIRECTIONAL APPLICATIONS
Polarity: for unidirectional types the band denotes cathode
end, no cathode band on bidirectional types
For bidirectional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
600
UNIT
W
(1)
Peak pulse power dissipation
Peak pulse current
with a 10/1000 μs waveform
with a 10/1000 μs waveform
TM = 50 °C
PPPM
(1)
IPPM
See next table
5.0
A
(2)
PD
Power dissipation
W
(3)
TA = 25 °C
PD
1.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Notes
(1)
(2)
(3)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Power dissipation mounted on infinite heatsink
Power dissipation mounted on minimum recommended pad layout
Revision: 20-Jul-2020
Document Number: 87606
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000