SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
www.vishay.com
Vishay General Semiconductor
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
•
3.5 %: very tight VBR tolerance
• Low leakage current
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
DO-214AA (SMBJ)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRIMARY CHARACTERISTICS
VBR (uni-directional)
BR (bi-directional)
WM (uni-directional)
6.5 V to 228 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
V
6.5 V to 21.8 V
5.0 V to 188 V
5.0 V to 18 V
600 W
V
VWM (bi-directional)
TYPICAL APPLICATIONS
PPPM
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
PD at TM = 50 °C
5.0 W
PD at TA = 25 °C
1.0 W
TJ max.
150 °C
MECHANICAL DATA
Polarity
Uni-directional, bi-directional
DO-214AA (SMBJ)
Case: DO-214AA (SMBJ)
Package
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
- halogen-free, RoHS-compliant, and
industrial grade
DEVICES FOR BI-DIRECTIONAL
APPLICATIONS
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
Polarity: for uni-directional types the band denotes cathode
end, no cathode band on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
600
UNIT
W
(1)
Peak pulse power dissipation
Peak pulse current
with a 10/1000 μs waveform
with a 10/1000 μs waveform
TM = 50 °C
PPPM
(1)
IPPM
See next table
5.0
A
(2)
PD
Power dissipation
W
(3)
TA = 25 °C
PD
1.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Notes
(1)
(2)
(3)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Power dissipation mounted on infinite heatsink
Power dissipation mounted on minimum recommended pad layout
Revision: 26-Aug-15
Document Number: 87606
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000