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SMBJ495A

更新时间： 2024-09-24 21:09:07
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网光电二极管
页数 文件大小 规格书
5页 400K
描述
Trans Voltage Suppressor Diode, 600W, 495V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

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SMBJ495A 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-C2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：14 weeks风险等级：1.53
其他特性：PRSM-MIN最大击穿电压：578 V
最小击穿电压：522 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：5 W参考标准：IEC-61000-4-2, 4-4, 4-5
最大重复峰值反向电压：495 V表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SMBJ495A 数据手册

 浏览型号SMBJ495A的Datasheet PDF文件第2页浏览型号SMBJ495A的Datasheet PDF文件第3页浏览型号SMBJ495A的Datasheet PDF文件第4页浏览型号SMBJ495A的Datasheet PDF文件第5页 
Features  
Applications  
■ RoHS compliant*  
■ IEC 61000-4-2 ESD (Min. Level 4)  
■ IEC 61000-4-4 EFT  
■ Surface Mount SMB package  
■ Standoff Voltage: 5 to 495 volts  
■ Power Dissipation: 600 watts  
■ IEC 61000-4-5 Surge  
SMBJ Transient Voltage Suppressor Diode Series  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)  
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown  
Voltage up to 550 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices  
from 0 V to Minimum Breakdown Voltage.  
®
Bourns Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
600  
Unit  
Watts  
(Note 1,2)  
Minimum Peak Pulse Power Dissipation (T = 1 ms)  
P
P
PK  
Peak Forward Surge Current  
8.3 ms Single Half Sine Wave Superimposed on Rated Load  
I
100  
Amps  
FSM  
(Note 3)  
(JEDEC Method)  
Steady State Power Dissipation @ TL = 75 °C  
P
5.0  
Watts  
Volts  
M(AV)  
Maximum Instantaneous Forward Voltage @ I = 50 A  
PP  
(Note 5)  
V
F
J
(For Unidirectional Units Only)  
Operating Temperature Range  
Storage Temperature Range  
T
-55 to +150  
-55 to +175  
°C  
°C  
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.  
5.  
V
= 3.5 V on SMBJ5.0A through SMBJ90A and V = 5.0 V on SMBJ100A through SMBJ495A.  
F
F
How to Order  
SMBJ 5.0 CA  
Package  
SMBJ = SMB/DO-214AA  
Working Peak Reverse Voltage  
5.0 = 5.0 V  
(Volts)  
RWM  
Asia-Pacific:  
Tel: +886-2 2562-4117  
Fax: +886-2 2562-4116  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
Europe:  
Tel: +41-41 768 5555  
Fax: +41-41 768 5510  
The Americas:  
Tel: +1-951 781-5500  
Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
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SMBJ495A 替代型号

型号 品牌 替代类型 描述 数据表
P6SMB530A LITTELFUSE

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