Datasheet > SMBJ30A-E3

SMBJ30A-E3

更新时间： 2024-12-01 01:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	95K
描述
Surface Mount TRANSZORB Transient Voltage Suppressors

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中文翻译

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数据手册

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SMBJ30A-E3 数据手册

SMBJ5.0A thru SMBJ188A

Vishay General Semiconductor

www.vishay.com

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AA (SMB J-Bend)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

V_BR(bi-directional)

6.4 V to 231 V

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

V_BR(uni-directional)

6.4 V to 231 V

5.0 V to 188 V

600 W

V_WM

P_PPM

_FSM(uni-directional only)

100 A

MECHANICAL DATA

T_Jmax.

150 °C

Case: DO-214AA (SMBJ) 

Molding compound meets UL 94 V-0 flammability rating

Polarity

Uni-directional, bi-directional

DO-214AA (SMBJ)

Package

Base P/N-E3

RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

I_PPM

See next table

100

(2)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Operating junction and storage temperature range

I_FSM

T_J, T_STG

- 55 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2.

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 06-Feb-14

Document Number: 88392

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SMBJ30A-E3相关器件

型号	品牌	获取价格	描述	数据表
SMBJ30A-E3/52	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ,
SMBJ30A-E3/5B	VISHAY	获取价格	TVS DIODE 30V 48.4V DO214AA
SMBJ30AE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ30A-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ30A-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ30A-H	YINT	获取价格	Automotive and High Reliability TVS Diodes
SMBJ30AHE3/52	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ,
SMBJ30AHE3/5B	VISHAY	获取价格	TVS DIODE 30V 48.4V DO214AA
SMBJ30A-HR	LITTELFUSE	获取价格	SMBJ HR系列高可靠性瞬态抑制二极管是经升级筛选的Littelfuse即用型高可靠性瞬
SMBJ30A-HRA	LITTELFUSE	获取价格	TVS DIODE 30V 48.4V DO214AA

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