是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DO-214AA | 包装说明: | R-PDSO-C2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.31 | 其他特性: | EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED |
最大击穿电压: | 40.7 V | 最小击穿电压: | 33.3 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AA |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性: | UNIDIRECTIONAL | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 30 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | MATTE TIN |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJ30-E3/52 | VISHAY |
获取价格 |
TVS DIODE 30V 53.5V DO214AA | |
SMBJ30-E3/5B | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 30V V(RWM), Unidirectional, | |
SMBJ30E3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMBJ30E3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMBJ30E3TR | MICROSEMI |
获取价格 |
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 | |
SMBJ30-G | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMBJ30-GT3 | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMBJ30HE3/52 | VISHAY |
获取价格 |
TVS DIODE 30V 53.5V DO214AA | |
SMBJ30-HE3/52 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMBJ30HE3/5B | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 30V V(RWM), Unidirectional, |