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SMBJ20A-TR PDF预览

SMBJ20A-TR

更新时间: 2024-11-27 22:53:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管光电二极管PC局域网
页数 文件大小 规格书
6页 84K
描述
TRANSILTM

SMBJ20A-TR 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:17 weeks风险等级:0.91
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:179967Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Other
Samacsys Footprint Name:SMBSamacsys Released Date:2015-07-22 14:41:32
Is Samacsys:N最小击穿电压:22.2 V
最大钳位电压:42.8 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:4000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:20 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

SMBJ20A-TR 数据手册

 浏览型号SMBJ20A-TR的Datasheet PDF文件第2页浏览型号SMBJ20A-TR的Datasheet PDF文件第3页浏览型号SMBJ20A-TR的Datasheet PDF文件第4页浏览型号SMBJ20A-TR的Datasheet PDF文件第5页浏览型号SMBJ20A-TR的Datasheet PDF文件第6页 
SMBJ5.0A-TR,CA-TR  
SMBJ188A-TR,CA-TR  
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 600 W (10/1000µs)  
STAND OFF VOLTAGERANGE :  
From 5V to 188V.  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
JEDEC REGISTERED PACKAGE OUTLINE  
DESCRIPTION  
The SMBJ series are TRANSILTM diodesdesigned  
specifically for protecting sensitive equipment  
against transient overvoltages.  
SMB  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particularly  
suited to protect voltage sensitive devices such  
as MOS Technology and low voltage supplied  
IC’s.  
(JEDEC DO-214AA)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipationon infinite heatsink  
Value  
600  
5
Unit  
W
Tj initial = Tamb  
P
Tamb = 50°C  
W
IFSM  
Non repetitivesurge peak forward  
current for unidirectionaltypes  
tp = 10ms  
Tj initial = Tamb  
100  
A
Storage temperaturerange  
Maximum junction temperature  
Tstg  
Tj  
- 65 to + 175  
150  
°C  
°C  
TL  
Maximum lead temperaturefor soldering during 10 s.  
260  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
20  
Unit  
°C/W  
°C/W  
Junction to leads  
Rth (j-a)  
Junction to ambient on printedcircuit on recommendedpad  
layout  
100  
January 1998 Ed: 3  
1/6  

SMBJ20A-TR 替代型号

型号 品牌 替代类型 描述 数据表
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