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SMBJ200A PDF预览

SMBJ200A

更新时间: 2024-11-28 20:35:23
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网光电二极管
页数 文件大小 规格书
5页 400K
描述
Trans Voltage Suppressor Diode, 600W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

SMBJ200A 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:15 weeks风险等级:1.63
Is Samacsys:N其他特性:PRSM-MIN
最大击穿电压:247 V最小击穿电压:224 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
参考标准:IEC-61000-4-2, 4-4, 4-5最大重复峰值反向电压:200 V
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMBJ200A 数据手册

 浏览型号SMBJ200A的Datasheet PDF文件第2页浏览型号SMBJ200A的Datasheet PDF文件第3页浏览型号SMBJ200A的Datasheet PDF文件第4页浏览型号SMBJ200A的Datasheet PDF文件第5页 
Features  
Applications  
nꢀ RoHSꢀcompliant*  
nꢀ IECꢀ61000-4-2ꢀESDꢀ(Min.ꢀLevelꢀ4)  
nꢀ IECꢀ61000-4-4ꢀEFT  
nꢀ SurfaceꢀMountꢀSMBꢀpackage  
nꢀꢀStandoffꢀVoltage:ꢀ5ꢀtoꢀ495ꢀvolts  
nꢀ PowerꢀDissipation:ꢀ600ꢀwatts  
nꢀ IECꢀ61000-4-5ꢀSurge  
SMBJꢀTransientꢀVoltageꢀSuppressorꢀDiodeꢀSeriesꢀ  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)  
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown  
Voltage up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for  
bidirectional devices from 0 V to Minimum Breakdown Voltage.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Minimum Peak Pulse Power Dissipation (T = 1 ms)  
P
P
600  
Watts  
PK  
Peak Forward Surge Current  
8.3 ms Single Half Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
100  
5.0  
Amps  
FSM  
(Note 3)  
Steady State Power Dissipation @ TL = 75 °C  
P
Watts  
Volts  
M(AV)  
SMBJ5.0A ~ SMBJ90A  
SMBJ100A ~ SMBJ495A  
Maximum Instantaneous Forward Voltage @ I = 50 A  
PP  
3.5  
5.0  
V
F
J
(For Unidirectional Units Only)  
Operating Temperature Range  
Storage Temperature Range  
T
-55 to +150  
-55 to +150  
°C  
°C  
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
How to Order  
SMBJ 5.0 CA  
Package  
SMBJ = SMB/DO-214AA  
Working Peak Reverse Voltage  
5.0 = 5.0 V  
(Volts)  
RWM  
Asia-Pacific:  
Tel: +886-2 2562-4117  
Fax: +886-2 2562-4116  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
EMEA:  
Tel: +36 88 520 390  
Fax: +36 88 520 211  
The Americas:  
Tel: +1-951 781-5500  
Fax: +1-951 781-5700  
www.bourns.com  
*RoHSꢀDirectiveꢀ2002/95/ECꢀJan.ꢀ27,ꢀ2003ꢀincludingꢀannexꢀandꢀRoHSꢀRecastꢀ2011/65/EUꢀJuneꢀ8,ꢀ2011.ꢀ  
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.  
Theꢀdeviceꢀcharacteristicsꢀandꢀparametersꢀinꢀthisꢀdataꢀsheetꢀcanꢀandꢀdoꢀvaryꢀinꢀdifferentꢀapplicationsꢀandꢀactualꢀdeviceꢀperformanceꢀmayꢀvaryꢀoverꢀtime.  
Usersꢀshouldꢀverifyꢀactualꢀdeviceꢀperformanceꢀinꢀtheirꢀspecificꢀapplications.  

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