Datasheet > SMBJ160AHE3/5B

SMBJ160AHE3/5B

更新时间： 2024-11-01 22:14:59

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
6页	121K
描述
TVS DIODE 160V 259V DO214AA

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMBJ160AHE3/5B 数据手册

SMBJ5.0A thru SMBJ188A

Vishay General Semiconductor

www.vishay.com

Surface-Mount TRANSZORB Transient Voltage Suppressors

FEATURES

Available

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in unidirectional and bidirectional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate

(duty cycle): 0.01 %

Available

SMB (DO-214AA)

• Excellent clamping capability

• Very fast response time

Cathode

Anode

• Low incremental surge resistance

(unidirectional)

(bidirectional)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

LINKS TO ADDITIONAL RESOURCES

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMB (DO-214AA)

V_BR(bidirectional)

6.4 V to 231 V

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

_BR(unidirectional)

6.4 V to 231 V

5.0 V to 188 V

600 W

V_WM

P_PPM

P_D

5.0 W

_FSM(unidirectional only)

100 A

T_Jmax.

150 °C

(“_X” denotes revision code e.g. A, B, ...)

Polarity

Unidirectional, bidirectional

SMB (DO-214AA)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Package

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

DEVICES FOR BIDIRECTION APPLICATIONS

For bidirectional devices use CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

Polarity: for unidirectional types the band denotes cathode

end, no marking on bidirectional types

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

SYMBOL

P_PPM

VALUE

600

UNIT

I_PPM

See next table

5.0

Power dissipation on infinite heatsink at T_A= 50 °C

Peak forward surge current 8.3 ms single half sine-wave unidirectional only ⁽²⁾

Operating junction and storage temperature range

P_D

I_FSM

100

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 30-Jun-2021

Document Number: 88392

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

SMBJ160AHE3/5B 替代型号

型号	品牌	替代类型	描述	数据表
SMBJ160A-E3/5B	VISHAY	完全替代	TVS DIODE 160V 259V DO214AA
SMBJ160A-M3/52	VISHAY	完全替代	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT
SMBJ160A-E3/52	VISHAY	类似代替	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ,

与SMBJ160AHE3/5B相关器件

型号	品牌	获取价格	描述	数据表
SMBJ160A-M3/52	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT
SMBJ160A-M3/5B	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT
SMBJ160AP	MCC	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppress
SMBJ160AQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMBJ160AQ	YANGJIE	获取价格	SMB
SMBJ160A-Q1	ANBON	获取价格	SMB
SMBJ160AT3	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
SMBJ160A-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ160A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ160ATR	ETC	获取价格	TVS DIODE 160V 259V SMB

与SMBJ160AHE3/5B相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ160AHE3/5B

SMBJ160AHE3/5B 数据手册

SMBJ160AHE3/5B 替代型号

与SMBJ160AHE3/5B相关器件

与SMBJ160AHE3/5B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ160AHE3/5B

SMBJ160AHE3/5B 数据手册

SMBJ160AHE3/5B 替代型号

与SMBJ160AHE3/5B相关器件

与SMBJ160AHE3/5B相关文章

您还可以找

您在本页遇到什么问题？