Datasheet > SMBJ13CA-E3/5B

SMBJ13CA-E3/5B

更新时间： 2024-11-14 22:14:59

品牌	Logo	应用领域
威世 - VISHAY		局域网光电二极管电视
页数	文件大小	规格书
6页	121K
描述
TVS DIODE 13V 21.5V DO214AA

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMBJ13CA-E3/5B 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.26
其他特性：	EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED	最大击穿电压：	15.9 V
最小击穿电压：	14.4 V	击穿电压标称值：	15.15 V
最大钳位电压：	21.5 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	BIDIRECTIONAL
认证状态：	Not Qualified	最大重复峰值反向电压：	13 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30

SMBJ13CA-E3/5B 数据手册

SMBJ5.0A thru SMBJ188A

Vishay General Semiconductor

www.vishay.com

Surface-Mount TRANSZORB Transient Voltage Suppressors

FEATURES

Available

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in unidirectional and bidirectional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate

(duty cycle): 0.01 %

Available

SMB (DO-214AA)

• Excellent clamping capability

• Very fast response time

Cathode

Anode

• Low incremental surge resistance

(unidirectional)

(bidirectional)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

LINKS TO ADDITIONAL RESOURCES

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMB (DO-214AA)

V_BR(bidirectional)

6.4 V to 231 V

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

_BR(unidirectional)

6.4 V to 231 V

5.0 V to 188 V

600 W

V_WM

P_PPM

P_D

5.0 W

_FSM(unidirectional only)

100 A

T_Jmax.

150 °C

(“_X” denotes revision code e.g. A, B, ...)

Polarity

Unidirectional, bidirectional

SMB (DO-214AA)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Package

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

DEVICES FOR BIDIRECTION APPLICATIONS

For bidirectional devices use CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

Polarity: for unidirectional types the band denotes cathode

end, no marking on bidirectional types

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

SYMBOL

P_PPM

VALUE

600

UNIT

I_PPM

See next table

5.0

Power dissipation on infinite heatsink at T_A= 50 °C

Peak forward surge current 8.3 ms single half sine-wave unidirectional only ⁽²⁾

Operating junction and storage temperature range

P_D

I_FSM

100

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 30-Jun-2021

Document Number: 88392

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

SMBJ13CA-E3/5B 替代型号

型号	品牌	替代类型	描述	数据表
SMBJ13CA-E3/52	VISHAY	完全替代	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2
SMBJ13CA-M3/52	VISHAY	类似代替	TVS DIODE 13V 21.5V DO214AA
SMBJ13CAHE3/5B	VISHAY	类似代替	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2

与SMBJ13CA-E3/5B相关器件

型号	品牌	获取价格	描述	数据表
SMBJ13CAE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 13V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ13CAE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 13V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ13CAE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 13V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ13CAE3TR	MICROSEMI	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBJ13CA-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 13V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ13CA-H	YINT	获取价格	Automotive and High Reliability TVS Diodes
SMBJ13CAHE3	VISHAY	获取价格	Surface Mount TRANSZORB Transient Voltage Suppressors
SMBJ13CAHE3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2
SMBJ13CA-HE3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2
SMBJ13CAHE3/5B	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2

与SMBJ13CA-E3/5B相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

14
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

35

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ13CA-E3/5B

SMBJ13CA-E3/5B 技术参数

SMBJ13CA-E3/5B 数据手册

SMBJ13CA-E3/5B 替代型号

与SMBJ13CA-E3/5B相关器件

与SMBJ13CA-E3/5B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ13CA-E3/5B

SMBJ13CA-E3/5B 技术参数

SMBJ13CA-E3/5B 数据手册

SMBJ13CA-E3/5B 替代型号

与SMBJ13CA-E3/5B相关器件

与SMBJ13CA-E3/5B相关文章

您还可以找

您在本页遇到什么问题？