SMBJ5.0A thru SMBJ188A
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMB J-Bend)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
VBR (bi-directional)
6.4 V to 231 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
VBR (uni-directional)
6.4 V to 231 V
5.0 V to 188 V
600 W
VWM
PPPM
I
FSM (uni-directional only)
100 A
MECHANICAL DATA
TJ max.
150 °C
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Polarity
Uni-directional, bi-directional
DO-214AA (SMBJ)
Package
Base P/N-E3
-
RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
600
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
IPPM
See next table
100
A
(2)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
IFSM
A
TJ, TSTG
- 55 to + 150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 10-Dec-13
Document Number: 88392
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000